发明申请
US20090189703A1 CIRCUITS AND DESIGN STRUCTURES FOR MONITORING NBTI (NEGATIVE BIAS TEMPERATURE INSTABILITY) EFFECT AND/OR PBTI (POSITIVE BIAS TEMPERATURE INSTABILITY) EFFECT 有权
用于监测NBTI(负偏差温度不稳定性)的电路和设计结构影响和/或PBTI(正偏差温度不稳定性)效应

CIRCUITS AND DESIGN STRUCTURES FOR MONITORING NBTI (NEGATIVE BIAS TEMPERATURE INSTABILITY) EFFECT AND/OR PBTI (POSITIVE BIAS TEMPERATURE INSTABILITY) EFFECT
摘要:
A ring oscillator has an odd number of NOR-gates greater than or equal to three, each with first and second input terminals, a voltage supply terminal, and an output terminal. The first input terminals of all the NOR-gates are interconnected, and each of the NOR-gates has its output terminal connected to the second input terminal of an immediately adjacent one of the NOR-gates. During a stress mode, a voltage supply and control block applies a stress enable signal to the interconnected first input terminals, and an increased supply voltage to the voltage supply terminals. During a measurement mode, this block grounds the interconnected first input terminals, and applies a normal supply voltage to the voltage supply terminals. Also included are an analogous NAND-gate based circuit, a circuit combining the NAND- and NOR-aspects, a circuit with a ring oscillator where the inverters may be coupled directly or through inverting paths, and circuits for measuring the bias temperature instability effect in pass gates.
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