Circuits and design structures for monitoring NBTI (negative bias temperature instability) effect and/or PBTI (positive bias temperature instability) effect
    1.
    发明授权
    Circuits and design structures for monitoring NBTI (negative bias temperature instability) effect and/or PBTI (positive bias temperature instability) effect 有权
    影响NBTI(负偏压温度不稳定)效应和/或PBTI(正偏温度不稳定)效应的电路和设计结构

    公开(公告)号:US07642864B2

    公开(公告)日:2010-01-05

    申请号:US12021459

    申请日:2008-01-29

    CPC分类号: H03K3/0315

    摘要: A ring oscillator has an odd number of NOR-gates greater than or equal to three, each with first and second input terminals, a voltage supply terminal, and an output terminal. The first input terminals of all the NOR-gates are interconnected, and each of the NOR-gates has its output terminal connected to the second input terminal of an immediately adjacent one of the NOR-gates. During a stress mode, a voltage supply and control block applies a stress enable signal to the interconnected first input terminals, and an increased supply voltage to the voltage supply terminals. During a measurement mode, this block grounds the interconnected first input terminals, and applies a normal supply voltage to the voltage supply terminals. Also included are an analogous NAND-gate based circuit, a circuit combining the NAND- and NOR-aspects, a circuit with a ring oscillator where the inverters may be coupled directly or through inverting paths, and circuits for measuring the bias temperature instability effect in pass gates.

    摘要翻译: 环形振荡器具有大于或等于3的奇数NOR门,每个具有第一和第二输入端子,电压源端子和输出端子。 所有NOR门的第一输入端互连,每个NOR门的输出端连接到紧邻的一个NOR门的第二输入端。 在应力模式期间,电压供应和控制块向互连的第一输入端施加应力使能信号,并向电压端提供增加的电源电压。 在测量模式期间,该模块接地互连的第一输入端,并向电源端施加正常的电源电压。 还包括类似的基于NAND门的电路,组合NAND和NOR方面的电路,电路与环形振荡器,其中逆变器可以直接耦合或通过反向路径耦合,以及用于测量偏置温度不稳定性效应的电路 通过门。

    CIRCUITS AND DESIGN STRUCTURES FOR MONITORING NBTI (NEGATIVE BIAS TEMPERATURE INSTABILITY) EFFECT AND/OR PBTI (POSITIVE BIAS TEMPERATURE INSTABILITY) EFFECT
    2.
    发明申请
    CIRCUITS AND DESIGN STRUCTURES FOR MONITORING NBTI (NEGATIVE BIAS TEMPERATURE INSTABILITY) EFFECT AND/OR PBTI (POSITIVE BIAS TEMPERATURE INSTABILITY) EFFECT 有权
    用于监测NBTI(负偏差温度不稳定性)的电路和设计结构影响和/或PBTI(正偏差温度不稳定性)效应

    公开(公告)号:US20090189703A1

    公开(公告)日:2009-07-30

    申请号:US12021459

    申请日:2008-01-29

    IPC分类号: H03K3/03

    CPC分类号: H03K3/0315

    摘要: A ring oscillator has an odd number of NOR-gates greater than or equal to three, each with first and second input terminals, a voltage supply terminal, and an output terminal. The first input terminals of all the NOR-gates are interconnected, and each of the NOR-gates has its output terminal connected to the second input terminal of an immediately adjacent one of the NOR-gates. During a stress mode, a voltage supply and control block applies a stress enable signal to the interconnected first input terminals, and an increased supply voltage to the voltage supply terminals. During a measurement mode, this block grounds the interconnected first input terminals, and applies a normal supply voltage to the voltage supply terminals. Also included are an analogous NAND-gate based circuit, a circuit combining the NAND- and NOR-aspects, a circuit with a ring oscillator where the inverters may be coupled directly or through inverting paths, and circuits for measuring the bias temperature instability effect in pass gates.

    摘要翻译: 环形振荡器具有大于或等于3的奇数NOR门,每个具有第一和第二输入端子,电压源端子和输出端子。 所有NOR门的第一输入端互连,每个NOR门的输出端连接到紧邻的一个NOR门的第二输入端。 在应力模式期间,电压供应和控制块向互连的第一输入端施加应力使能信号,并向电压端提供增加的电源电压。 在测量模式期间,该模块接地互连的第一输入端,并向电源端施加正常的电源电压。 还包括类似的基于NAND栅极的电路,组合NAND和NOR方面的电路,电路与环形振荡器,其中逆变器可以直接耦合或通过反向路径耦合,以及用于测量偏置温度不稳定性效应的电路 通过门。