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1.发明申请CIRCUITS AND DESIGN STRUCTURES FOR MONITORING NBTI (NEGATIVE BIAS TEMPERATURE INSTABILITY) EFFECT AND/OR PBTI (POSITIVE BIAS TEMPERATURE INSTABILITY) EFFECT 有权用于监测NBTI（负偏差温度不稳定性）的电路和设计结构影响和/或PBTI（正偏差温度不稳定性）效应公开(公告)号：US20090189703A1
公开(公告)日：2009-07-30
申请号：US12021459
申请日：2008-01-29
申请人： Ching-Te K. Chuang , Jae-Joon Kim , Tae-Hyoung Kim , Pong-Fei Lu , Saibal Mukhopadhyay , Rahul M. Rao , Shao-yi Wang
发明人： Ching-Te K. Chuang , Jae-Joon Kim , Tae-Hyoung Kim , Pong-Fei Lu , Saibal Mukhopadhyay , Rahul M. Rao , Shao-yi Wang
IPC分类号： H03K3/03
CPC分类号： H03K3/0315
摘要： A ring oscillator has an odd number of NOR-gates greater than or equal to three, each with first and second input terminals, a voltage supply terminal, and an output terminal. The first input terminals of all the NOR-gates are interconnected, and each of the NOR-gates has its output terminal connected to the second input terminal of an immediately adjacent one of the NOR-gates. During a stress mode, a voltage supply and control block applies a stress enable signal to the interconnected first input terminals, and an increased supply voltage to the voltage supply terminals. During a measurement mode, this block grounds the interconnected first input terminals, and applies a normal supply voltage to the voltage supply terminals. Also included are an analogous NAND-gate based circuit, a circuit combining the NAND- and NOR-aspects, a circuit with a ring oscillator where the inverters may be coupled directly or through inverting paths, and circuits for measuring the bias temperature instability effect in pass gates.
摘要翻译： 环形振荡器具有大于或等于3的奇数NOR门，每个具有第一和第二输入端子，电压源端子和输出端子。 所有NOR门的第一输入端互连，每个NOR门的输出端连接到紧邻的一个NOR门的第二输入端。 在应力模式期间，电压供应和控制块向互连的第一输入端施加应力使能信号，并向电压端提供增加的电源电压。 在测量模式期间，该模块接地互连的第一输入端，并向电源端施加正常的电源电压。 还包括类似的基于NAND栅极的电路，组合NAND和NOR方面的电路，电路与环形振荡器，其中逆变器可以直接耦合或通过反向路径耦合，以及用于测量偏置温度不稳定性效应的电路 通过门。
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2.发明授权Circuits and design structures for monitoring NBTI (negative bias temperature instability) effect and/or PBTI (positive bias temperature instability) effect 有权影响NBTI（负偏压温度不稳定）效应和/或PBTI（正偏温度不稳定）效应的电路和设计结构公开(公告)号：US07642864B2
公开(公告)日：2010-01-05
申请号：US12021459
申请日：2008-01-29
申请人： Ching-Te K. Chuang , Jae-Joon Kim , Tae-Hyoung Kim , Pong-Fei Lu , Saibal Mukhopadhyay , Rahul M. Rao , Shao-yi Wang
发明人： Ching-Te K. Chuang , Jae-Joon Kim , Tae-Hyoung Kim , Pong-Fei Lu , Saibal Mukhopadhyay , Rahul M. Rao , Shao-yi Wang
CPC分类号： H03K3/0315
摘要： A ring oscillator has an odd number of NOR-gates greater than or equal to three, each with first and second input terminals, a voltage supply terminal, and an output terminal. The first input terminals of all the NOR-gates are interconnected, and each of the NOR-gates has its output terminal connected to the second input terminal of an immediately adjacent one of the NOR-gates. During a stress mode, a voltage supply and control block applies a stress enable signal to the interconnected first input terminals, and an increased supply voltage to the voltage supply terminals. During a measurement mode, this block grounds the interconnected first input terminals, and applies a normal supply voltage to the voltage supply terminals. Also included are an analogous NAND-gate based circuit, a circuit combining the NAND- and NOR-aspects, a circuit with a ring oscillator where the inverters may be coupled directly or through inverting paths, and circuits for measuring the bias temperature instability effect in pass gates.
摘要翻译： 环形振荡器具有大于或等于3的奇数NOR门，每个具有第一和第二输入端子，电压源端子和输出端子。 所有NOR门的第一输入端互连，每个NOR门的输出端连接到紧邻的一个NOR门的第二输入端。 在应力模式期间，电压供应和控制块向互连的第一输入端施加应力使能信号，并向电压端提供增加的电源电压。 在测量模式期间，该模块接地互连的第一输入端，并向电源端施加正常的电源电压。 还包括类似的基于NAND门的电路，组合NAND和NOR方面的电路，电路与环形振荡器，其中逆变器可以直接耦合或通过反向路径耦合，以及用于测量偏置温度不稳定性效应的电路 通过门。
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