发明申请
- 专利标题： IMAGE SENSOR WITH LOW ELECTRICAL CROSS-TALK
- 专利标题（中）： 具有低电压交叉口的图像传感器
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申请号： US12259143申请日： 2008-10-27
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公开(公告)号： US20090200590A1公开(公告)日： 2009-08-13
- 发明人: Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
- 申请人： Duli Mao , Sohei Manabe , Vincent Venezia , Hsin-Chih Tai , Hidetoshi Nozaki , Yin Qian , Howard E. Rhodes
- 申请人地址： US CA Santa Clara
- 专利权人： Omnivision Technologies Inc.
- 当前专利权人： Omnivision Technologies Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L31/113
- IPC分类号： H01L31/113 ; H01L21/00
摘要：
An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.
公开/授权文献
- US08357984B2 Image sensor with low electrical cross-talk 公开/授权日：2013-01-22
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