发明申请
- 专利标题： Capacitive substrate and method of making same
- 专利标题（中）： 电容衬底及其制作方法
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申请号： US12380616申请日： 2009-03-02
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公开(公告)号： US20090206051A1公开(公告)日： 2009-08-20
- 发明人: Rabindra N. Das , Frank D. Egitto , John M. Lauffer , How T. Lin , Voya R. Markovich
- 申请人： Rabindra N. Das , Frank D. Egitto , John M. Lauffer , How T. Lin , Voya R. Markovich
- 主分类号： H01G13/00
- IPC分类号： H01G13/00 ; B05D5/12 ; C23C14/34 ; C23C14/30 ; B05D3/00
摘要：
A capacitive substrate and method of making same in which first and second glass layers are used. A first conductor is formed on a first of the glass layers and a capacitive dielectric material is positioned over the conductor. The second conductor is then positioned on the capacitive dielectric and the second glass layer positioned over the second conductor. Conductive thru-holes are formed to couple to the first and second conductors, respectively, such that the conductors and capacitive dielectric material form a capacitor when the capacitive substrate is in operation.
公开/授权文献
- US07803688B2 Capacitive substrate and method of making same 公开/授权日：2010-09-28