发明申请
- 专利标题： PLASMA PROCESSING APPARATUS
- 专利标题（中）： 等离子体加工设备
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申请号： US12366907申请日： 2009-02-06
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公开(公告)号： US20090211708A1公开(公告)日： 2009-08-27
- 发明人: Naoki Matsumoto , Jun Yoshikawa , Masaru Sasaki , Kazuyuki Kato , Masafumi Shikata , Shingo Takahashi
- 申请人： Naoki Matsumoto , Jun Yoshikawa , Masaru Sasaki , Kazuyuki Kato , Masafumi Shikata , Shingo Takahashi
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-029177 20080208; JP2008-045697 20080227; JP2009-026422 20090206; JP2009-026423 20090206
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24 disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25 positioned uprightly above the inclined surfaces 16a and 16b.
公开/授权文献
- US08753475B2 Plasma processing apparatus 公开/授权日：2014-06-17
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