公开(公告)号：US20090211708A1

公开(公告)日：2009-08-27

申请号：US12366907

申请日：2009-02-06

申请人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

发明人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

IPC分类号： H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24 disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25 positioned uprightly above the inclined surfaces 16a and 16b.

摘要翻译： 提供了通过限定电介质和槽之间的位置关系而具有高度改进的等离子体点火性能和点火稳定性的等离子体处理装置。 等离子体处理装置11包括具有顶部开口的处理室12; 电介质15，其底面上具有倾斜面16a，16b，使得厚度尺寸依次变化，并设置成封闭处理室12的顶部开口; 以及设置在电介质15的顶表面上的天线24，用于向电介质15提供微波，从而在电介质15的底表面处产生等离子体。此外，天线24设置有多个槽25， 倾斜面16a，16b。

公开(公告)号：US08753475B2

公开(公告)日：2014-06-17

申请号：US12366907

申请日：2009-02-06

申请人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

发明人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25positioned uprightly above the inclined surfaces 16a and 16b.

摘要翻译： 提供了通过限定电介质和槽之间的位置关系而具有高度改进的等离子体点火性能和点火稳定性的等离子体处理装置。 等离子体处理装置11包括具有顶部开口的处理室12; 电介质15，其底面上具有倾斜面16a，16b，使得厚度尺寸依次变化，并设置成封闭处理室12的顶部开口; 以及天线24，其布置在电介质15的顶表面上，用于向电介质15提供微波，从而在电介质15的底表面处产生等离子体。此外，天线24设置有多个槽25， 表面16a和16b。

公开(公告)号：US08877004B2

公开(公告)日：2014-11-04

申请号：US12866545

申请日：2009-02-06

申请人： Naoki Matsumoto ,  Kazuyuki Kato ,  Masafumi Shikata ,  Masaru Sasaki

发明人： Naoki Matsumoto ,  Kazuyuki Kato ,  Masafumi Shikata ,  Masaru Sasaki

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32238

摘要： A dielectric plate 20 is provided at a ceiling surface facing a susceptor 3 of a processing chamber 2, and a slot antenna 30 having a multiple number of microwave transmissive slots 33 is provided on a top surface of the dielectric plate 20. A protrusion member 21 configured as a separate member from the dielectric plate 20 is provided on a peripheral portion of a bottom surface of the dielectric plate 20 so as to prevent an abnormal electric discharge. Electric field intensity in the vicinity of the dielectric plate 20 is controlled by adjusting a gap between an outer peripheral surface 22 of a cylindrical part of the protrusion member 21 and an inner peripheral surface 5a of a sidewall of the processing chamber 2 or by adjusting a thickness of the cylindrical part of the protrusion member 21.

摘要翻译： 电介质板20设置在面向处理室2的基座3的顶面上，并且具有多个微波透射槽33的缝隙天线30设置在电介质板20的顶表面上。突起构件21 在电介质板20的底面的周边部设置有与电介质板20分离的部件，以防止异常放电。 通过调整突起部件21的圆筒部的外周面22与处理室2的侧壁的内周面5a之间的间隙，调整电介质板20附近的电场强度， 突出部件21的圆筒部的厚度。

公开(公告)号：US20110039417A1

公开(公告)日：2011-02-17

申请号：US12866545

申请日：2009-02-06

申请人： Naoki Matsumoto ,  Kazuyuki Kato ,  Masafumi Shikata ,  Masaru Sasaki

发明人： Naoki Matsumoto ,  Kazuyuki Kato ,  Masafumi Shikata ,  Masaru Sasaki

IPC分类号： H01L21/465 ,  H01L21/46

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32238

摘要： A dielectric board (20) is arranged on a ceiling surface, which is of a processing container (2) and faces a susceptor (3), a slot antenna (30) having a plurality of slots (33) which pass through microwaves is arranged on an upper surface of the dielectric board (20), and a protruding member (21), which is composed of a member different from the dielectric board (20) and eliminates abnormal discharge, is provided on a lower peripheral section of the dielectric board (20). A field strength at the peripheral section of the dielectric board (20) is controlled by adjusting a space between an outer circumference surface (22) of a cylindrical section of the protruding member (21) and a side wall inner circumference surface (5a) of the processing container (2) or adjusting the thickness of the cylindrical section of the protruding member (21).

摘要翻译： 在处理容器（2）的顶棚面上配置有面向基座（3）的电介质板（20），具有通过微波的多个槽（33）的缝隙天线（30） 在所述电介质基板（20）的上表面上设置有与所述电介质板（20）不同的部件构成并且消除异常放电的突出部件（21） （20）。 通过调整突出构件（21）的圆筒部的外周面（22）与侧壁内周面（5a）之间的空间来控制电介质基板（20）的周边部的场强， 处理容器（2）或调整突出部件（21）的圆筒部的厚度。

公开(公告)号：US09277637B2

公开(公告)日：2016-03-01

申请号：US13885708

申请日：2011-11-16

申请人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

发明人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC分类号： H01L21/306 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

摘要翻译： 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：US20090215274A1

公开(公告)日：2009-08-27

申请号：US12392228

申请日：2009-02-25

申请人： Naoki Matsumoto ,  Jun Yoshikawa ,  Tetsuya Nishizuka ,  Masaru Sasaki

发明人： Naoki Matsumoto ,  Jun Yoshikawa ,  Tetsuya Nishizuka ,  Masaru Sasaki

IPC分类号： H01L21/3065 ,  C23C16/54 ,  H01L21/283

CPC分类号： H01L21/3065 ,  H01J37/32192 ,  H01J37/32568 ,  H01J2237/3343 ,  H01L21/31116 ,  H01L21/32137

摘要： The plasma processing apparatus includes a holding table disposed in a processing chamber, for holding thereon a target substrate; a dielectric plate disposed at a position facing the holding table, for introducing a microwave into the processing chamber; a plasma igniting unit for carrying out plasma ignition in a state in which an electric field is generated inside the processing chamber by the introduced microwave, thereby generating the plasma inside the processing chamber; and a control unit, which includes an elevating mechanism, for performing control operations to alter a distance between the holding table and the dielectric plate to a first distance, to drive the plasma igniting unit, to alter the distance between the holding table and the dielectric plate to a second distance different from the first distance, and to carry out the plasma process on the semiconductor substrate.

摘要翻译： 等离子体处理装置包括：保持台，设置在处理室中，用于保持目标基板; 电介质板，设置在面对所述保持台的位置，用于将微波引入所述处理室; 等离子体点火单元，用于在通过引入的微波在处理室内产生电场的状态下进行等离子体点火，从而在处理室内产生等离子体; 以及控制单元，其包括升降机构，用于执行将保持台和电介质板之间的距离改变到第一距离的控制操作，以驱动等离子体点火单元，以改变保持台和电介质之间的距离 并且在半导体衬底上进行等离子体处理。

公开(公告)号：US20130302992A1

公开(公告)日：2013-11-14

申请号：US13885708

申请日：2011-11-16

申请人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

发明人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC分类号： H05H1/46

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

摘要翻译： 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：US09324572B2

公开(公告)日：2016-04-26

申请号：US13582523

申请日：2011-03-03

申请人： Masaru Sasaki ,  Kazuki Moyama ,  Masaki Inoue ,  Yoko Noto

发明人： Masaru Sasaki ,  Kazuki Moyama ,  Masaki Inoue ,  Yoko Noto

IPC分类号： H01L21/461 ,  H01L21/311 ,  H01J37/32 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/31116 ,  H01J37/32192 ,  H01J37/32238 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/7833

摘要： Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O2, CO2, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.

摘要翻译： 提供了提高氮化硅膜相对于用作基底的氧化硅膜或硅的选择性的等离子体蚀刻方法。 在等离子体蚀刻方法中，通过在将处理气体供应到处理容器中的同时排出处理气体而将处理容器中的压力设定为预定水平，通过向处理容器供给外部能量来产生等离子体，并且设定施加到保持 将处理容器中的基板保持为预定值，以相对于硅和/或氧化硅膜选择性地蚀刻氮化硅膜，处理气体包括等离子体激发气体，CH x F y气体和至少一种选择的氧化气体 来自由O 2，CO 2，CO组成的组和氧化气体相对于CH x F y气体的流量设定为4/9以上。

公开(公告)号：US09285435B2

公开(公告)日：2016-03-15

申请号：US13805031

申请日：2011-06-23

申请人： Yoshihiro Konno ,  Masaru Sasaki

发明人： Yoshihiro Konno ,  Masaru Sasaki

IPC分类号： G01R33/02 ,  G01R33/032

CPC分类号： G01R33/032

摘要： A two-core optical fiber magnetic field sensor is configured from at least a light incidence/emission unit; a lens; a magnetic garnet; and a reflector, wherein the lens and the magnetic garnet are disposed between the light incidence/emission end of the light incidence/emission unit and the reflector; a light beam is emitted from one optical fiber; the light beam is reflected by the reflector after being transmitted through the lens and the magnetic garnet; the light beam is transmitted again through the magnetic garnet and the lens after the reflection; and incident on the other optical fiber, the light beam is emitted again from the other optical fiber, and reflected by the reflector after being transmitted through the lens and the magnetic garnet; and the light beam is transmitted again through the magnetic garnet and the lens after the reflection and incident again on the one optical fiber.

摘要翻译： 两芯光纤磁场传感器由至少一个入射/发射单元构成; 镜头 磁石榴石 以及反射器，其中所述透镜和所述磁性石榴石设置在所述光入射/发射单元的光入射/发射端与所述反射器之间; 从一根光纤射出光束; 光束在透射透镜和磁性石榴石后被反射器反射; 反射后光束再次通过磁石榴石和透镜传播; 入射到另一根光纤上时，光束再次从另一根光纤发射，并被反射器透射后通过透镜和磁性石榴石反射; 并且在反射之后光束再次通过磁性石榴石和透镜再次传输到一根光纤上。

公开(公告)号：US09218983B2

公开(公告)日：2015-12-22

申请号：US14131713

申请日：2012-07-12

申请人： Takashi Dokan ,  Masaru Sasaki ,  Hikaru Kamata

发明人： Takashi Dokan ,  Masaru Sasaki ,  Hikaru Kamata

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/033

CPC分类号： H01L21/3065 ,  H01J2237/334 ,  H01L21/0206 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069

摘要： The etching method of the present invention comprises first and second etching steps (S1, S3) having different types of films to be etched and different types of process gases. During a transition from the first etching step (S1) to the second etching step (S3), a first switching process step (S2) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the first etching step. During a transition from the second etching step (S3) to the first etching step (S1), a second switching process step (S4) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the second etching step.

摘要翻译： 本发明的蚀刻方法包括具有不同类型的被蚀刻膜和不同类型的工艺气体的第一和第二蚀刻步骤（S1，S3）。 在从第一蚀刻步骤（S1）到第二蚀刻步骤（S3）的转变期间，执行第一切换处理步骤（S2），其中处理容器填充有清洁气体，并且清洁气体变成等离子体 以在第一蚀刻步骤中除去沉积在处理容器中的反应产物。 在从第二蚀刻步骤（S3）到第一蚀刻步骤（S1）的转变期间，执行第二切换处理步骤（S4），其中处理容器填充有清洁气体，并且清洁气体变成等离子体 以在第二蚀刻步骤中除去沉积在处理容器中的反应产物。