公开(公告)号：US09693244B2

公开(公告)日：2017-06-27

申请号：US14119752

申请日：2012-05-24

Applicant: Kenichi Maruhashi ,  Shingo Takahashi ,  Noriyuki Itabashi ,  Nobuhide Yoshida

Inventor： Kenichi Maruhashi ,  Shingo Takahashi ,  Noriyuki Itabashi ,  Nobuhide Yoshida

IPC: H04W24/08 ,  H04W88/06 ,  H04W72/08 ,  H04W24/00 ,  H04W4/14 ,  H04L12/403 ,  H04W84/18 ,  H04W28/04 ,  H04L29/08 ,  H04L12/40

CPC classification number: H04W24/08 ,  H04L12/403 ,  H04L12/4035 ,  H04L67/125 ,  H04L2012/4026 ,  H04W4/14 ,  H04W24/00 ,  H04W28/04 ,  H04W72/082 ,  H04W84/18 ,  H04W88/06

Abstract: A sensor system in which it is possible to identify a sufficient number of sensors even in a situation where the data length of a packet is limited, as well as a sensor and a receiving device in the same, are provided. A sensor repeating a measurement period for performing measurement and a transmission period for performing transmission at predetermined cycles, includes: a measurement section (11) that outputs during the measurement period measurement information based on predetermined measurement; and a transmission section (12) that transmits during the transmission period, by using a single packet or a plurality of packets, source identification information for identifying a source of a packet, the measurement information, and sensor-related information for identifying the sensor and/or a measurement target equipment of this sensor.

公开(公告)号：USD647474S1

公开(公告)日：2011-10-25

申请号：US29397328

申请日：2011-07-14

Applicant: Shingo Takahashi

Designer： Shingo Takahashi

公开(公告)号：US08042584B2

公开(公告)日：2011-10-25

申请号：US11892387

申请日：2007-08-22

Applicant: Shingo Takahashi

Inventor： Shingo Takahashi

IPC: B60C11/03

CPC classification number: B60C11/1369 ,  B60C11/0309 ,  B60C11/042 ,  B60C2011/0383 ,  B60C2011/1338 ,  B60C2200/10 ,  Y10S152/03

Abstract: A pneumatic tire is provided in the tread portion (2) with a circumferential groove (3, 3b, 3c) extending continuously in the tire circumferential direction and having a pair of oppositely opposed groove walls (6). The circumferential groove (3, 3b, 3c) is provided in at least one of the groove walls (6) with radial grooves (9) arranged along the longitudinal direction of the circumferential groove (3). The radially outer end (9o) of the radial groove (9) is positioned in a range (a1) of from 0 to 20% of the depth (GDt) of the circumferential groove. The radially inner end (9i) of the radial groove (9) is positioned in a range (a2) of from 80 to 100% of the depth (GDt) of the circumferential groove. The radial groove has an opening width (g) of not less than 1.0 mm, but not more than 6.0 mm.

Abstract translation: 在胎面部（2）上设置有沿轮胎周向连续延伸并具有一对相对的槽壁（6）的周向槽（3,3b，3c）的充气轮胎。 所述周向沟槽（3,3b，3c）设置在至少一个所述槽壁（6）中，沿着所述周向槽（3）的长度方向配置有径向槽（9）。 径向槽（9）的径向外端（9o）位于圆周槽深度（GDt）的0〜20％的范围（a1）内。 径向槽（9）的径向内端（9i）位于圆周槽深度（GDt）的80％到100％的范围（a2）内。 径向槽的开口宽度（g）不小于1.0mm，但不大于6.0mm。

公开(公告)号：US07943517B2

公开(公告)日：2011-05-17

申请号：US11877243

申请日：2007-10-23

Applicant: Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

Inventor： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC: H01L21/4763

CPC classification number: H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

Abstract translation: 一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜以覆盖开口的内表面，形成主膜以填充开口 在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素 在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分， 的层间绝缘膜。

公开(公告)号：US20100187493A1

公开(公告)日：2010-07-29

申请号：US12654979

申请日：2010-01-12

Applicant: Shingo Takahashi

Inventor： Shingo Takahashi

IPC: H01L45/00 ,  H01L29/22 ,  H01L21/34

CPC classification number: G11C11/5614 ,  G11C13/0011 ,  G11C2213/11 ,  G11C2213/34 ,  G11C2213/51 ,  G11C2213/56 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/16

Abstract: Disclosed is a semiconductor storage device including a first electrode formed by being embedded in an insulating film formed on a substrate, a second electrode formed to be opposed to the first electrode, a storage layer formed between the first electrode and the second electrode, the storage layer being on a side of the first electrode, an ion source layer formed between the storage layer and the second electrode, and a diffusion prevention layer formed of a manganese oxide layer between the insulating film and the first electrode.

Abstract translation: 公开了一种半导体存储装置，包括：嵌入在形成在基板上的绝缘膜中形成的第一电极，与第一电极相对形成的第二电极，形成在第一电极和第二电极之间的存储层， 在所述第一电极的一侧，形成在所述保持层和所述第二电极之间的离子源层，以及由所述绝缘膜和所述第一电极之间的氧化锰层形成的扩散防止层。

公开(公告)号：US20060128148A1

公开(公告)日：2006-06-15

申请号：US11287137

申请日：2005-11-22

Applicant: Shingo Takahashi

Inventor： Shingo Takahashi

IPC: H01L21/44 ,  H01L21/4763

CPC classification number: H01L21/76877 ,  H01L21/76847 ,  H01L21/76864

Abstract: A method of manufacturing a semiconductor device by forming an alloy layer in a connection hole provided in a layer insulation film on a substrate, including a first step of forming a first Cu layer in the state of covering the inside wall of the connection hole, a second step of forming an Ag layer on the first Cu layer, a third step of filling up with a second Cu layer the connection hole provided with the Ag layer, and a fourth step of forming a via composed of a CuAg alloy by diffusion caused by a heat treatment.

Abstract translation: 一种通过在设置在基板上的层间绝缘膜的连接孔中形成合金层来制造半导体器件的方法，包括在覆盖连接孔的内壁的状态下形成第一Cu层的第一步骤， 在第一Cu层上形成Ag层的第二步骤，向第二Cu层填充设置有Ag层的连接孔的第三步骤，以及由CuAg合金通过由 热处理。

公开(公告)号：US20060102267A1

公开(公告)日：2006-05-18

申请号：US11280240

申请日：2005-11-17

Applicant: Shingo Takahashi ,  Satoshi Tsuda

Inventor： Shingo Takahashi ,  Satoshi Tsuda

IPC: B60C11/11

CPC classification number: B60C11/1369 ,  B60C11/0306 ,  B60C11/0309 ,  Y10S152/902

Abstract: It aims to provide a heavy duty pneumatic tire with block patterns and capable of improving deflected wear resisting performances without sacrificing wet grip performances or on-snow performances and that can particularly be favorably used for all seasons. The present invention comprises block patterns employing at least three types of blocks 4 comprised of central blocks 4C delimited by the central longitudinal groove 2M, the intermediate longitudinal grooves 2M, and the central lateral grooves 3C, intermediate blocks 4M delimited by the intermediate longitudinal grooves 2M, the outer longitudinal grooves 2S and the intermediate lateral grooves 3M, and outer blocks 4S that are delimited by outer longitudinal grooves 2S, outer lateral grooves 3S that extend from this outer longitudinal grooves 2S to the tread ends E, and wherein longitudinal length ratios (L4/W4) of blocks 4, groove width ratios of longitudinal grooves and lateral grooves (w2/w3), maximum widths of blocks, minimum widths of blocks and ratios thereof (W4max/W4min), and circumferential edge components and tire axial edge components and ratios thereof (EC/EL) at respective stages of wear are defined to be within specified ranges.

Abstract translation: 其目的是提供一种具有块状图案的重型充气轮胎，并且能够在不牺牲湿抓地性能或降雪性能的情况下提高偏转耐磨性能，并且可以特别适用于所有季节。 本发明包括使用至少三种类型的块4的块图案，所述块4包括由中央纵向槽2M限定的中心块4C，中间纵向槽2 M和中间横向槽3C，中间块4M由中间块4限定 由外纵向槽2S限定的中间纵向槽2 M，外纵向槽2 S和中间横向槽3 M以及外侧块体S S，从外部纵向槽2 S延伸的外侧横向槽3 S 到其胎面端部E，并且其中块4的纵向长度比（L4 / W4），纵向槽和横向槽的槽宽比（w2 / w3），块的最大宽度，块的最小宽度及其比率（W4max / W4min），并且在各磨损阶段的周缘部分和轮胎轴向边缘部件及其比例（EC / EL）被限定在规定范围内。

公开(公告)号：US20050218519A1

公开(公告)日：2005-10-06

申请号：US11063876

申请日：2005-02-24

Applicant: Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

Inventor： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L23/532

CPC classification number: H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein. An interconnection main layer, which contains Cu as a main component, is embedded in the opening. A barrier film is interposed between the interlevel insulating film and the interconnection main layer within the opening. The barrier film contains, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film.

Abstract translation: 半导体器件包括设置在半导体衬底上并具有形成在其中的开口的层间绝缘膜。 将包含Cu作为主要成分的互连主层嵌入开口部。 隔离膜介于开口内的层间绝缘膜和互连主层之间。 作为主要成分，阻挡膜含有具有层间绝缘膜的成分元素的预定金属元素的化合物。

公开(公告)号：US20050178672A1

公开(公告)日：2005-08-18

申请号：US10512205

申请日：2003-04-22

Applicant: Shuzo Sato ,  Takeshi Nogami ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiroshi Horikoshi ,  Hiizu Ohtorii

Inventor： Shuzo Sato ,  Takeshi Nogami ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiroshi Horikoshi ,  Hiizu Ohtorii

IPC: B23H5/08 ,  B23H3/04 ,  B23H3/08 ,  C25D3/16 ,  C25D7/00 ,  C25F3/02 ,  C25F3/22 ,  C25F7/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3063 ,  B23H3/00

CPC classification number: C25F3/02 ,  B24B37/042 ,  B24B37/046 ,  C25F7/00 ,  H01L21/30625 ,  H01L21/3063

Abstract: The object is to make it possible to pass an electric current to the object of polishing with a stable current density distribution up to the end point of polishing, to use the same plating apparatus, cleaning apparatus and other apparatuses as those conventionally used, and to carry out the conventional manufacturing process flow. A substrate (1) provided with a metallic film (2) and a opposite electrode (3) are disposed oppositely to each other with a predetermined distance therebetween in an electrolytic solution, and an electric current is passed to the metallic film (2) through the electrolytic solution by an anode (4) set out of contact with the metallic film (2), so as to electropolish the metallic film (2). Simultaneously with the electropolishing, wiping is conducted by sliding a pad on the metallic film.

Abstract translation: 本发明的目的是使得可以以直到抛光终点的稳定的电流密度分布将电流传递到抛光对象，使用与常规使用的相同的电镀装置，清洁装置和其他装置，并且 执行常规制造工艺流程。 设置有金属膜（2）和相对电极（3）的基板（1）在电解液中彼此相对地设置有预定距离，并且电流通过金属膜（2）通过 所述电解液通过与所述金属膜（2）不接触的阳极（4），以使所述金属膜（2）电镀。 在电抛光的同时，通过在金属膜上滑动垫来进行擦拭。

公开(公告)号：US4936658A

公开(公告)日：1990-06-26

申请号：US70788

申请日：1987-07-07

Applicant: Sakae Tanaka ,  Tadahiko Yamaoka ,  Shingo Takahashi ,  Tomoaki Takahashi

Inventor： Sakae Tanaka ,  Tadahiko Yamaoka ,  Shingo Takahashi ,  Tomoaki Takahashi

IPC: G03B21/00 ,  G02B27/00 ,  G02F1/1335 ,  G03B33/12 ,  G09G3/18 ,  H04N9/31

CPC classification number: H04N9/3167 ,  G02B27/0018

Abstract: A projection type liquid crystal display device includes a light source and condenser lenses for emitting two groups of beams of light which orthogonally cross each other. A first device is disposed in the path of one of the groups of beams and comprises a liquid crystal panel and at least one polarization plate to transmit P-wave polarized light. A second device is disposed in a path of the other group of beams of light and comprises a liquid crystal panel and at least one polarization plate to transmit P-wave polarized light. A dichroic mirror disposed to receive light from the first and second devices synthesizes the P-wave polarized light by transmitting P-wave polarized light from the first device and for reflecting the P-wave polarized light from the second device.

Abstract translation: 投影型液晶显示装置包括用于发射正交交叉的两组光束的光源和聚光透镜。 第一装置设置在一组光束的路径中，并且包括液晶面板和至少一个透射P波偏振光的偏振板。 第二装置设置在另一组光束的路径中，并且包括液晶面板和至少一个偏振板以透射P波偏振光。 设置成从第一和第二装置接收光的分色镜通过从第一装置传输P波偏振光并且用于反射来自第二装置的P波偏振光来合成P波偏振光。