发明申请
- 专利标题: GAS HEATING DEVICE FOR A VAPOR DEPOSITION SYSTEM
- 专利标题(中): 用于蒸气沉积系统的气体加热装置
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申请号: US12044574申请日: 2008-03-07
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公开(公告)号: US20090223452A1公开(公告)日: 2009-09-10
- 发明人: Ronald Nasman , Patrick J. Biel , Jacques Faguet
- 申请人: Ronald Nasman , Patrick J. Biel , Jacques Faguet
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23C14/00
摘要:
A method and system for depositing a thin film on a substrate using a vapor deposition process is described. The processing system comprises a gas heating device for heating one or more constituents of a film forming composition. The gas heating device comprises one or more resistive heating elements configured to receive an electrical current from one or more power sources. Additionally, the gas heating device comprises a mounting structure configured to support the one or more resistive heating elements. Furthermore, the gas heating device comprises one or more static mounting devices coupled to the mounting structure and configured to fixedly couple the one or more resistive heating elements to the mounting structure, and one or more dynamic mounting devices coupled to the mounting structure and configured to automatically compensate for changes in a length of each of the one or more resistive heating elements.
公开/授权文献
- US08291856B2 Gas heating device for a vapor deposition system 公开/授权日:2012-10-23
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