发明申请
- 专利标题: Semiconductor Device and Manufacturing Method Thereof
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12276746申请日: 2008-11-24
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公开(公告)号: US20090224255A1公开(公告)日: 2009-09-10
- 发明人: Hidehito Kitakado , Masahiko Hayakawa , Shunpei Yamazaki , Taketomi Asami
- 申请人: Hidehito Kitakado , Masahiko Hayakawa , Shunpei Yamazaki , Taketomi Asami
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 优先权: JP11-125392 19990430
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L33/00
摘要:
Channel doping is an effective method for controlling Vth, but if Vth shifts to the order of −4 to −3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vth of both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH4, NH3, and N2O, and a silicon oxynitride film (B) manufactured from SiH4 and N2O. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.
公开/授权文献
- US07855416B2 Semiconductor device and manufacturing method thereof 公开/授权日:2010-12-21