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发明申请
US20090229977A1 Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering System, and Magnetron Sputtering System 审中-公开
磁控溅射系统的磁体结构和阴极电极单元，以及磁控溅射系统

Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering System, and Magnetron Sputtering System
摘要：
Provided are a magnet structure and the like capable of changing a magnetic force line distribution on a surface of a target to thereby achieve wide erosion of a target, using a simple drive mechanism. A magnet structure (110) comprises a main magnet (10, 13) disposed at a reverse surface (20B) side of a target (20) to produce a main magnetic force line reaching an obverse surface (20A) of the target, an adjustment magnet (11) disposed at the reverse surface (20B) side of the target (20) to produce an adjustment magnetic force line for changing a magnetic flux density distribution produced by the main magnetic force line, a magnetic path (21A, 21B, 24) of the adjustment magnetic force line which is disposed at the reverse surface (20B) side of the target 20, and a magnetic field adjustment means (12, 14) configured to be able to change strength of the adjustment magnetic force line passing through inside of the magnetic path (21A, 21B, 24).
摘要（中）：

提供了能够使用简单的驱动机构改变目标表面上的磁力线分布从而实现目标的广泛侵蚀的磁体结构等。 磁体结构（110）包括设置在目标（20）的反面（20B）侧的主磁体（10,13），以产生到达目标的正面（20A）的主磁力线，调节 设置在所述目标（20）的所述反面（20B）侧的磁体（11），以产生用于改变由所述主磁力线产生的磁通密度分布的调节磁力线，磁路（21A，21B，24 ）设置在靶20的反面（20B）侧的调整用磁力线以及能够改变通过内侧的调节用磁力线的强度的磁场调整单元（12,14） 的磁路（21A，21B，24）。

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