发明申请
- 专利标题: GATE STRUCTURES IN SEMICONDUCTOR DEVICES
- 专利标题(中): 半导体器件的栅结构
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申请号: US12428303申请日: 2009-04-22
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公开(公告)号: US20090267132A1公开(公告)日: 2009-10-29
- 发明人: Tae-Ho Cha , Seong-Hwee Cheong , Gil-Heyun Choi , Byung-Hee Kim , Hee-Sook Park , Jong-Min Baek
- 申请人: Tae-Ho Cha , Seong-Hwee Cheong , Gil-Heyun Choi , Byung-Hee Kim , Hee-Sook Park , Jong-Min Baek
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2008-0037556 20080423
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L29/78 ; H01L29/792
摘要:
A gate structure includes an insulation layer on a substrate, a first conductive layer pattern on the insulation layer, a metal ohmic layer pattern on the first conductive layer pattern, a diffusion preventing layer pattern on the metal ohmic layer pattern, an amorphous layer pattern on the diffusion preventing layer pattern, and a second conductive layer pattern on the amorphous layer pattern. The gate structure may have a low sheet resistance and desired thermal stability.
公开/授权文献
- US07928498B2 Gate structures in semiconductor devices 公开/授权日:2011-04-19
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