发明申请
- 专利标题： NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非挥发性半导体存储器件及其制造方法
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申请号： US12408249申请日： 2009-03-20
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公开(公告)号： US20090267135A1公开(公告)日： 2009-10-29
- 发明人: Hiroyasu Tanaka , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Yosuke Komori , Hideaki Aochi , Megumi Ishiduki , Yasuyuki Matsuoka
- 申请人： Hiroyasu Tanaka , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Yosuke Komori , Hideaki Aochi , Megumi Ishiduki , Yasuyuki Matsuoka
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-117508 20080428
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
A non-volatile semiconductor storage device includes a first layer and a second layer. The first layer includes: a plurality of first conductive layers extending in parallel to a substrate and laminated in a direction perpendicular to the substrate; a first insulation layer formed on an upper layer of the plurality of first conductive layers; a first semiconductor layer formed to penetrate the plurality of first conductive layers; and a charge accumulation layer formed between the first conductive layers and the first semiconductor layer. Respective ends of the first conductive layers are formed in a stepwise manner in relation to each other in a first direction. The second layer includes: a plurality of second conductive layers extending in parallel to the substrate and laminated in a direction perpendicular to the substrate, the second conductive layers being formed in the same layer as the plurality of first conductive layers; and a second insulation layer formed on an upper layer of the plurality of second conductive layers. Respective ends of the second conductive layers are formed to align along a straight line extending in a direction substantially perpendicular to the substrate at a predetermined area.
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