发明申请
US20090267141A1 METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES
审中-公开
制造碳化硅垂直MOSFET器件的方法
- 专利标题： METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES
- 专利标题（中）： 制造碳化硅垂直MOSFET器件的方法
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申请号： US12498630申请日： 2009-07-07
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公开(公告)号： US20090267141A1公开(公告)日： 2009-10-29
- 发明人: Kevin Sean Matocha , Jody Alan Fronheiser , Larry Burton Rowland , Jesse Berkley Tucker , Stephen Daley Arthur , Zachary Matthew Stum
- 申请人： Kevin Sean Matocha , Jody Alan Fronheiser , Larry Burton Rowland , Jesse Berkley Tucker , Stephen Daley Arthur , Zachary Matthew Stum
- 申请人地址： US NY Schenectady
- 专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人地址： US NY Schenectady
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/22
摘要：
A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.
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