发明申请
- 专利标题： Method for Forming Trenches on a Surface of a Semiconductor Substrate
- 专利标题（中）： 在半导体基板的表面上形成沟槽的方法
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申请号： US12112379申请日： 2008-04-30
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公开(公告)号： US20090273017A1公开(公告)日： 2009-11-05
- 发明人: Josef Willer , Michael Specht , Christoph Friederich , Doris Keitel-Schulz
- 申请人： Josef Willer , Michael Specht , Christoph Friederich , Doris Keitel-Schulz
- 申请人地址： DE Dresden
- 专利权人： QIMONDA FLASH GMBH
- 当前专利权人： QIMONDA FLASH GMBH
- 当前专利权人地址： DE Dresden
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/28 ; H01L21/311
摘要：
A method for forming trenches on a surface of a semiconductor substrate is described. The method may include: etching a first plurality of trenches into the surface of the semiconductor substrate; filling the first plurality of trenches with at least one material; and etching a second plurality of trenches into every second trench of the first plurality of trenches. Furthermore, a method for forming floating-gate electrodes on a semiconductor substrate and an integrated circuit is described.
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