发明申请
- 专利标题： DIAMOND ELECTRODE, METHOD FOR PRODUCING SAME, AND ELECTROLYTIC BATH
- 专利标题（中）： 钻石电极，其制造方法和电解槽
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申请号： US12093087申请日： 2006-10-25
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公开(公告)号： US20090301865A1公开(公告)日： 2009-12-10
- 发明人: Shigeru Yoshida , Katsuhito Yoshida , Toshiya Takahashi , Takahisa Iguchi , Fuminori Higuchi
- 申请人： Shigeru Yoshida , Katsuhito Yoshida , Toshiya Takahashi , Takahisa Iguchi , Fuminori Higuchi
- 申请人地址： JP Itami-shi, Hyogo
- 专利权人： SUMITOMO ELECTRIC HARDMETAL CORP.
- 当前专利权人： SUMITOMO ELECTRIC HARDMETAL CORP.
- 当前专利权人地址： JP Itami-shi, Hyogo
- 优先权： JP2005-338642 20051124; JP2006-105493 20060406
- 国际申请： PCT/JP2006/321264 WO 20061025
- 主分类号： C25B9/00
- IPC分类号： C25B9/00 ; C25B11/03 ; B05D5/12
摘要：
A diamond electrode includes a conductive silicon substrate having a plurality of pores. The diamond electrode also includes a conductive diamond covering the conductive silicon substrate. The inner wall surfaces of the plurality of pores are at an angle of 60° to 85° with respect to a substrate of the conductive silicon substrate.
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