-
公开(公告)号：US09302327B2
公开(公告)日：2016-04-05
申请号：US13139799
申请日：2010-06-08
CPC分类号： B23B27/148 , B23B27/146 , B23B2226/315 , B23B2228/04 , C23C16/0227 , C23C16/27 , C23C16/271 , Y10T428/24372
摘要： The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 μm and not more than 10 μm and an average length of roughness profile elements RSm of not less than 1 μm and not more than 100 μm, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction.
摘要翻译： 本发明提供一种金刚石涂层的工具，其耐磨性在基材和金刚石层之间的界面处。 本发明的金刚石涂层工具是金刚石涂层工具，其包括基材和涂覆基材表面的金刚石层，其特征在于，基材表面的算术平均粗糙度Ra为0.1以上 μm且不大于10μm，粗糙度轮廓元素RSm的平均长度不小于1μm且不大于100μm，并且金刚石层具有从基体材料上接合的部分延伸的多个空腔 晶体生长方向。
-
公开(公告)号：US20110247929A1
公开(公告)日：2011-10-13
申请号：US12998181
申请日：2009-09-18
CPC分类号： C02F1/46109 , C02F2001/46138 , C23C16/271 , C25B11/0447
摘要： A diamond electrode having an oxidation resistant diamond film which will not separate from the electrode during electrolysis with highly oxidizing materials. The thickness of the diamond film is 20 pm or more and the diamond film should preferably cover opposite side surfaces of a substrate in such a manner as to also cover end surfaces 2a of the substrate. The surfaces of the substrate are covered with a plurality of diamond layers to form the film using repeated steps of forming separate diamond layers with each diamond layer having a thickness of 10 to 30 pm on one of the surfaces of the substrate and then forming a diamond layer having a thickness of 10 to 30 pm on the other surface of the substrate. Thus, it is possible to form a nonporous surface of diamond layer and prevent deterioration of an electrode caused by the separation of a diamond film.
摘要翻译： 具有抗氧化金刚石膜的金刚石电极，其在用高度氧化的材料电解期间不会与电极分离。 金刚石膜的厚度为20μm以上，并且金刚石膜优选以覆盖基板的端面2a的方式覆盖基板的相对侧面。 衬底的表面被多个金刚石层覆盖，以通过重复的步骤形成单独的金刚石层，每个金刚石层的厚度为10至30μm，其中一个表面上形成金刚石，然后形成金刚石 层在基板的另一个表面上具有10至30μm的厚度。 因此，可以形成金刚石层的无孔表面，并防止金刚石膜分离引起的电极劣化。
-
3.发明申请DIAMOND ELECTRODE, TREATMENT DEVICE AND METHOD FOR MANUFACTURING DIAMOND ELECTRODE 审中-公开钻石电极，处理装置及制造金刚石电极的方法公开(公告)号：US20100038235A1
公开(公告)日：2010-02-18
申请号：US12531199
申请日：2008-10-15
CPC分类号： C02F1/46109 , C01B32/25 , C02F1/4672 , C02F2001/46133 , C02F2001/46138 , C25B11/0421 , C25B11/0447
摘要： The present invention provides a diamond electrode that, in waste water treatment or production of functional water by using electrolysis, does not cause contamination of a solution or release of toxic substances, achieves enhancement of the energy efficiency, has excellent durability, and can endure prolonged use without damage. The present invention further provides a treatment device where the above electrode is used, and a method for manufacturing the above electrode. In a diamond electrode according to the present invention, the electrode includes a conductive diamond film covering one surface of a substrate. Assuming that the thickness of the substrate is T (μm) and the thickness of the conductive diamond film is t1 (μm), the ratio between them is 0.0010≦t1/T≦0.022 and 10≦t1≦70.
摘要翻译： 本发明提供一种金刚石电极，其在废水处理或使用电解生产功能性水时不会引起溶液的污染或有毒物质的释放，能够提高能量效率，具有优异的耐久性，并且能够耐受长时间 使用没有损坏。 本发明还提供一种使用上述电极的处理装置及其制造方法。 在根据本发明的金刚石电极中，电极包括覆盖基板的一个表面的导电金刚石膜。 假设衬底的厚度为T（μm），并且导电金刚石膜的厚度为t1（μm），则它们之间的比例为0.0010＆lt; nlE; t1 / T＆lt; ll; 0.022和10＆nlE; t1＆nlE; 70。
-
公开(公告)号：US06342301B1
公开(公告)日：2002-01-29
申请号：US09362093
申请日：1999-07-28
IPC分类号： B32B900
CPC分类号： E21B10/567 , B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/0685 , B22F7/06 , E21B10/5735 , Y10T428/24479 , Y10T428/24628 , Y10T428/24975 , Y10T428/252 , Y10T428/265 , Y10T428/30
摘要： The present invention aims at providing a material for a diamond sintered compact tool, which has a high strength and is available as a material for a cutting tool. Accordingly, the present invention is concerned with a diamond sintered compact comprising a WC-Co type cemented carbide substrate having slight undulation and a diamond sintered compact bonded to one surface of the substrate by sintering during a step of sintering at an ultra-high pressure and high temperature, which has a plate thickness is 0.5 mm to 5 mm and an outer diameter is at least 20 mm and whose diamond sintered compact layer has at least 50% of a thickness area within a range of 0.05 mm to 0.4 mm and contains Co diffusing from the cemented carbide substrate.
摘要翻译： 本发明的目的在于提供一种具有高强度且可作为切削工具的材料的金刚石烧结压实工具的材料。因此，本发明涉及一种包含WC-Co型胶结的金刚石烧结体 在具有厚度为0.5mm至5mm的超高压和高温烧结步骤期间通过烧结而结合到衬底的一个表面的金刚石烧结体的金刚石烧结体的厚度为0.5mm至5mm，外径为 至少20mm，并且其金刚石烧结致密层具有至少50％的厚度面积在0.05mm至0.4mm的范围内，并且包含从硬质合金基底扩散的Co。
-
5.发明授权
公开(公告)号：US5240877A
公开(公告)日：1993-08-31
申请号：US974121
申请日：1992-11-10
申请人： Katsuhito Yoshida , Kazuwo Tsuji
发明人： Katsuhito Yoshida , Kazuwo Tsuji
IPC分类号： H01L21/285 , H01L29/45
CPC分类号： H01L29/452 , H01L21/28575
摘要： An ohmic electrode for n-type cubic boron nitride is disclosed. The electrode is made of two thin films; and the first is at least one alloy material selected from a group consisting of Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, and the second is at least one metallic material selected from a group consisting of Ni, Cr, Mo and Pt.A process for producing an ohmic electrode for n-type cBN is disclosed. The process is comprised of the following steps: providing a thin film of at least one alloy selected from Au-Si alloy, Au-Ge alloy and Au-Si-Ge alloy, the weight ratio of Si and Ge being from 0.1 to 35% by weight, on n-type cBN; providing a thin film of at least one metal selected from Ni, Cr, Mo and Pt on the thin alloy film; and subjecting the type cBN having the films thus provided to a heat-treatment process in an inert gas or in a vacuum at a temperature ranging from 350.degree. C. to 600.degree. C.
摘要翻译： 公开了一种用于n型立方氮化硼的欧姆电极。 电极由两片薄膜制成; 第一种是选自Au-Si合金，Au-Ge合金和Au-Si-Ge合金中的至少一种合金材料，第二种是选自Ni，Cr ，Mo和Pt。 公开了一种用于制造用于n型cBN的欧姆电极的方法。 该方法包括以下步骤：提供选自Au-Si合金，Au-Ge合金和Au-Si-Ge合金的至少一种合金的薄膜，Si和Ge的重量比为0.1-35％ 在n型cBN上; 在薄合金膜上提供选自Ni，Cr，Mo和Pt中的至少一种金属的薄膜; 并将具有这样提供的膜的类型cBN在惰性气体或真空中在350℃至600℃的温度下进行热处理。
-
公开(公告)号：US20180147634A2
公开(公告)日：2018-05-31
申请号：US15487799
申请日：2017-04-14
CPC分类号： B23B27/146 , B23B27/148 , B23B2226/315 , B23B2228/04 , C23C16/0227 , C23C16/27 , C23C16/271 , Y10T428/24372
摘要： The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 μm and not more than 10 μm and an average length of roughness profile elements RSm of not less than 3.1 μm and not more than 5.4 μm, and that the diamond layer has a plurality of cavities at a portion bordering on the base material.
-
公开(公告)号：US20090301865A1
公开(公告)日：2009-12-10
申请号：US12093087
申请日：2006-10-25
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46133 , C02F2201/46115 , C25B1/13 , C25B11/03 , C25B11/0421 , C25B11/0447 , C25D17/10
摘要： A diamond electrode includes a conductive silicon substrate having a plurality of pores. The diamond electrode also includes a conductive diamond covering the conductive silicon substrate. The inner wall surfaces of the plurality of pores are at an angle of 60° to 85° with respect to a substrate of the conductive silicon substrate.
摘要翻译： 金刚石电极包括具有多个孔的导电硅衬底。 金刚石电极还包括覆盖导电硅衬底的导电金刚石。 多个孔的内壁面相对于导电性硅基板的基板成60°〜85°的角度。
-
公开(公告)号：US20140147374A1
公开(公告)日：2014-05-29
申请号：US14004139
申请日：2012-09-28
IPC分类号： G02B1/02
CPC分类号： G02B1/02 , C04B35/547 , C04B35/645 , C04B2235/656 , C04B2235/77 , C04B2235/78 , C04B2235/786 , C04B2235/9638 , G02B3/00
摘要： An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 μm and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%.
摘要翻译： 本发明的光学部件由ZnSe多晶体构成，ZnSe多晶体由平均粒径大于等于50μm且小于等于1mm的晶粒构成，具有相对密度 高于或等于99％。
-
公开(公告)号：US20110250394A1
公开(公告)日：2011-10-13
申请号：US13139799
申请日：2010-06-08
CPC分类号： B23B27/148 , B23B27/146 , B23B2226/315 , B23B2228/04 , C23C16/0227 , C23C16/27 , C23C16/271 , Y10T428/24372
摘要： The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 μm and not more than 10 μm and an average length of roughness profile elements RSm of not less than 1 μm and not more than 100 μm, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction.
摘要翻译： 本发明提供一种金刚石涂层的工具，其耐磨性在基材和金刚石层之间的界面处。 本发明的金刚石涂层工具是金刚石涂层工具，其包括基材和涂覆基材表面的金刚石层，其特征在于，基材表面的算术平均粗糙度Ra为0.1以上 μm且不大于10μm，粗糙度轮廓元素RSm的平均长度不小于1μm且不大于100μm，并且金刚石层具有从基体材料上接合的部分延伸的多个空腔 晶体生长方向。
-
10.发明申请Sintered diamond having high thermal conductivity and method for producing the same and heat sink employing it 有权具有高导热性的烧结金刚石及其制造方法以及使用它的散热器公开(公告)号：US20050051891A1
公开(公告)日：2005-03-10
申请号：US10494947
申请日：2002-10-16
IPC分类号： C04B35/645 , H01L23/373 , H01L23/34
CPC分类号： C04B35/645 , C04B35/52 , C04B35/62842 , C04B2235/3817 , C04B2235/3826 , C04B2235/3839 , C04B2235/404 , C04B2235/405 , C04B2235/407 , C04B2235/427 , C04B2235/428 , C04B2235/723 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/9607 , H01L23/3732 , H01L2924/0002 , H01S5/02476 , Y10S438/929 , Y10T428/26 , Y10T428/2982 , Y10T428/30 , H01L2924/00
摘要： This invention relates to a high thermal conductivity composite material which comprises diamond particles and a copper matrix useful as electronic heat sinks for electronics parts, particularly for semiconductor lasers, high performance MPUs (micro-processing units), etc., also to a process for the production of the same and a heat sink using the same. According to the high thermal conductivity diamond sintered compact of the present invention, in particular, there can be provided a heat sink having a high thermal conductivity as well as matching of thermal expansions, most suitable for mounting a large sized and high thermal load semiconductor chip, for example, high output semiconductor lasers, high performance MPU, etc. Furthermore, the properties such as thermal conductivity and thermal expansion can freely be controlled, so it is possible to select the most suitable heat sink depending upon the features and designs of elements to be mounted.
摘要翻译： 本发明涉及一种高导热性复合材料，其包括金刚石颗粒和铜基质，其可用作用于电子部件的电子散热器，特别是用于半导体激光器，高性能MPU（微处理单元）等），还涉及用于 相同的生产和散热器使用相同。 根据本发明的高导热性金刚石烧结体，特别地，可以提供具有高导热性以及热膨胀匹配的散热器，最适合于安装大型和高热负荷半导体芯片 ，例如高输出半导体激光器，高性能MPU等。此外，可以自由地控制热导率和热膨胀等性能，因此可以根据元件的特征和设计来选择最合适的散热器 要安装。
-
-
-
-
-
-
-
-
-
搜索结果
20 条记录 (耗时 0.013 秒)