发明申请
- 专利标题： SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND STORAGE MEDIUM
- 专利标题（中）： 半导体器件制造方法和存储介质
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申请号： US12479137申请日： 2009-06-05
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公开(公告)号： US20090305480A1公开(公告)日： 2009-12-10
- 发明人: Reiko SASAHARA , Jun Tamura , Shigeru Tahara
- 申请人： Reiko SASAHARA , Jun Tamura , Shigeru Tahara
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-150894 20080609
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of manufacturing a semiconductor device, including an interlayer insulating layer having a dielectric constant of about 1, includes at least one of hydrophobically modifying an interlayer insulating film for insulating lines from each other, before forming air gaps in the interlayer insulating film, and hydrophobically modifying the lines, after forming the air gaps in the interlayer insulating film.
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