公开(公告)号：US20090305480A1

公开(公告)日：2009-12-10

申请号：US12479137

申请日：2009-06-05

申请人： Reiko SASAHARA ,  Jun Tamura ,  Shigeru Tahara

发明人： Reiko SASAHARA ,  Jun Tamura ,  Shigeru Tahara

IPC分类号： H01L21/31

CPC分类号： H01L21/7682 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76885

摘要： A method of manufacturing a semiconductor device, including an interlayer insulating layer having a dielectric constant of about 1, includes at least one of hydrophobically modifying an interlayer insulating film for insulating lines from each other, before forming air gaps in the interlayer insulating film, and hydrophobically modifying the lines, after forming the air gaps in the interlayer insulating film.

摘要翻译： 包括介电常数为约1的层间绝缘层的半导体器件的制造方法包括在形成层间绝缘膜中的气隙之前相互绝缘的疏水改性层间绝缘膜中的至少一种，以及 在层间绝缘膜中形成气隙之后，对线进行疏水改性。

公开(公告)号：US20130025537A1

公开(公告)日：2013-01-31

申请号：US13632770

申请日：2012-10-01

申请人： Reiko SASAHARA ,  Jun Tamura ,  Shigeru Tahara

发明人： Reiko SASAHARA ,  Jun Tamura ,  Shigeru Tahara

IPC分类号： C23C16/52

CPC分类号： H01L22/12

摘要： A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference.

公开(公告)号：US08026150B2

公开(公告)日：2011-09-27

申请号：US12479137

申请日：2009-06-05

申请人： Reiko Sasahara ,  Jun Tamura ,  Shigeru Tahara

发明人： Reiko Sasahara ,  Jun Tamura ,  Shigeru Tahara

IPC分类号： H01L21/76 ,  H01L21/764

CPC分类号： H01L21/7682 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76885

摘要： A method of manufacturing a semiconductor device, including an interlayer insulating layer having a dielectric constant of about 1, includes at least one of hydrophobically modifying an interlayer insulating film for insulating lines from each other, before forming air gaps in the interlayer insulating film, and hydrophobically modifying the lines, after forming the air gaps in the interlayer insulating film.

摘要翻译： 包括介电常数为约1的层间绝缘层的半导体器件的制造方法包括在形成层间绝缘膜中的气隙之前相互绝缘的疏水改性层间绝缘膜中的至少一种，以及 在层间绝缘膜中形成气隙之后，对线进行疏水改性。

公开(公告)号：US08282984B2

公开(公告)日：2012-10-09

申请号：US12326507

申请日：2008-12-02

申请人： Reiko Sasahara ,  Jun Tamura ,  Shigeru Tahara

发明人： Reiko Sasahara ,  Jun Tamura ,  Shigeru Tahara

IPC分类号： C23C14/54

CPC分类号： H01L22/12

摘要： A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference.

摘要翻译： 通过使用处理气体对通过预定处理产生的OH基产生的具有OH基团的膜进行重整的损伤恢复处理的处理条件检查方法包括制备具有含OH基团的树脂膜的基板，测量OH基团的初始膜厚度 测定初始膜厚后，对基板进行损伤恢复处理，测定损伤恢复处理后的含有OH基的树脂膜的膜厚，计算含OH基树脂膜的膜厚差， 在损坏恢复处理之后，并且基于膜厚度差异确定损坏恢复处理的处理条件是否合适或不适当。

公开(公告)号：US20090146145A1

公开(公告)日：2009-06-11

申请号：US12326507

申请日：2008-12-02

申请人： Reiko SASAHARA ,  Jun Tamura ,  Shigeru Tahara

发明人： Reiko SASAHARA ,  Jun Tamura ,  Shigeru Tahara

IPC分类号： H01L23/58 ,  H01L21/66

CPC分类号： H01L22/12

摘要： A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference.

摘要翻译： 通过使用处理气体对通过预定处理产生的OH基产生的具有OH基团的膜进行重整的损伤恢复处理的处理条件检查方法包括制备具有含OH基团的树脂膜的基板，测量OH基团的初始膜厚度 测定初始膜厚后，对基板进行损伤恢复处理，测定损伤恢复处理后的含有OH基的树脂膜的膜厚，计算含OH基树脂膜的膜厚差， 在损坏恢复处理之后，并且基于膜厚度差异确定损坏恢复处理的处理条件是否合适或不适当。