发明申请
- 专利标题: Maskless Doping Technique for Solar Cells
- 专利标题(中): 太阳能电池无掩模掺杂技术
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申请号: US12200117申请日: 2008-08-28
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公开(公告)号: US20090317937A1公开(公告)日: 2009-12-24
- 发明人: Atul Gupta , Nicholas Bateman , Paul Murphy , Anthony Renau , Charles Carlson
- 申请人: Atul Gupta , Nicholas Bateman , Paul Murphy , Anthony Renau , Charles Carlson
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A improved, lower cost method of producing solar cells utilizing selective emitter design is disclosed. The contact regions are created on the substrate without the use of lithography or masks. The method utilizes ion implantation technology, and the relatively low accuracy requirements of the contact regions to reduce the process steps needed to produce a solar cell. In some embodiments, the current of the ion beam is selectively modified to create the highly doped contact regions. In other embodiments, the ion beam is focused, either through the use of an aperture or via adjustments to the beam line components to create the necessary doping profile. In still other embodiments, the wafer scan rate is modified to create the desired ion implantation pattern.
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