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    Maskless Doping Technique for Solar Cells
    1.
    发明申请
    Maskless Doping Technique for Solar Cells 审中-公开
    太阳能电池无掩模掺杂技术

    公开(公告)号：US20090317937A1

    公开(公告)日：2009-12-24

    申请号：US12200117

    申请日：2008-08-28

    申请人： Atul Gupta ,  Nicholas Bateman ,  Paul Murphy ,  Anthony Renau ,  Charles Carlson

    发明人： Atul Gupta ,  Nicholas Bateman ,  Paul Murphy ,  Anthony Renau ,  Charles Carlson

    IPC分类号： H01L21/00

    CPC分类号： H01J37/3172 ,  H01J2237/31701 ,  H01L21/265 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A improved, lower cost method of producing solar cells utilizing selective emitter design is disclosed. The contact regions are created on the substrate without the use of lithography or masks. The method utilizes ion implantation technology, and the relatively low accuracy requirements of the contact regions to reduce the process steps needed to produce a solar cell. In some embodiments, the current of the ion beam is selectively modified to create the highly doped contact regions. In other embodiments, the ion beam is focused, either through the use of an aperture or via adjustments to the beam line components to create the necessary doping profile. In still other embodiments, the wafer scan rate is modified to create the desired ion implantation pattern.

    摘要翻译： 公开了一种利用选择性发射极设计制造太阳能电池的成本较低的方法。 在不使用光刻或掩模的情况下，在基板上形成接触区域。 该方法利用离子注入技术，并且接触区域的相对低的精度要求减少了生产太阳能电池所需的工艺步骤。 在一些实施例中，选择性地修改离子束的电流以产生高度掺杂的接触区域。 在其他实施例中，离子束通过使用孔径或通过调整到束线分量来聚焦以产生必要的掺杂分布。 在其他实施例中，晶片扫描速率被修改以产生期望的离子注入图案。

    Use of chained implants in solar cells
    2.
    发明授权
    Use of chained implants in solar cells 有权
    在太阳能电池中使用链式植入物

    公开(公告)号：US07727866B2

    公开(公告)日：2010-06-01

    申请号：US12397634

    申请日：2009-03-04

    申请人： Nicholas Bateman ,  Atul Gupta ,  Paul Sullivan ,  Paul Murphy

    发明人： Nicholas Bateman ,  Atul Gupta ,  Paul Sullivan ,  Paul Murphy

    IPC分类号： H01L21/425

    CPC分类号： H01L31/18 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0827 ,  H01J2237/202 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

    摘要翻译： 太阳能电池的制造通过执行连续的离子注入而没有中间热循环而简化并降低成本。 除了缩短处理时间之外，使用链式离子注入也可以提高太阳能电池的性能。 在另一个实施方案中，连续地植入两种不同的物质而不破坏真空。 在另一个实施例中，植入衬底，然后翻转，使得其可以在被退火之前两面植入。 在另一个实施例中，施加一个或多个不同的掩模，并且在不破坏真空条件的情况下执行连续的注入，由此减少处理时间。

    USE OF CHAINED IMPLANTS IN SOLAR CELLS
    3.
    发明申请
    USE OF CHAINED IMPLANTS IN SOLAR CELLS 有权
    在太阳能电池中使用链状植入物

    公开(公告)号：US20090227094A1

    公开(公告)日：2009-09-10

    申请号：US12397634

    申请日：2009-03-04

    申请人： Nicholas Bateman ,  Atul Gupta ,  Paul Sullivan ,  Paul Murphy

    发明人： Nicholas Bateman ,  Atul Gupta ,  Paul Sullivan ,  Paul Murphy

    IPC分类号： H01L21/266

    CPC分类号： H01L31/18 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0827 ,  H01J2237/202 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

    摘要翻译： 太阳能电池的制造通过执行连续的离子注入而没有中间热循环而简化并降低成本。 除了缩短处理时间之外，使用链式离子注入也可以提高太阳能电池的性能。 在另一个实施方案中，连续地植入两种不同的物质而不破坏真空。 在另一个实施例中，植入衬底，然后翻转，使得其可以在退火之前两面植入。 在另一个实施例中，施加一个或多个不同的掩模，并且在不破坏真空条件的情况下执行连续的注入，由此减少处理时间。

    USE OF CHAINED IMPLANTS IN SOLAR CELL
    4.
    发明申请
    USE OF CHAINED IMPLANTS IN SOLAR CELL 有权
    在太阳能电池中使用链状植入物

    公开(公告)号：US20100197126A1

    公开(公告)日：2010-08-05

    申请号：US12760227

    申请日：2010-04-14

    申请人： Nicholas BATEMAN ,  Atul Gupta ,  Paul Sullivan ,  Paul Murphy

    发明人： Nicholas BATEMAN ,  Atul Gupta ,  Paul Sullivan ,  Paul Murphy

    IPC分类号： H01L21/266

    CPC分类号： H01L31/18 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0827 ,  H01J2237/202 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

    摘要翻译： 太阳能电池的制造通过执行连续的离子注入而没有中间热循环而简化并降低成本。 除了缩短处理时间之外，使用链式离子注入也可以提高太阳能电池的性能。 在另一个实施方案中，连续地植入两种不同的物质而不破坏真空。 在另一个实施例中，植入衬底，然后翻转，使得其可以在退火之前两面植入。 在另一个实施例中，施加一个或多个不同的掩模，并且在不破坏真空条件的情况下执行连续的注入，由此减少处理时间。

    Technique for improving ion implantation throughput and dose uniformity
    8.
    发明授权
    Technique for improving ion implantation throughput and dose uniformity 有权
    提高离子注入量和剂量均匀性的技术

    公开(公告)号：US07683347B2

    公开(公告)日：2010-03-23

    申请号：US11537050

    申请日：2006-09-29

    申请人： Atul Gupta ,  Anthony Renau ,  Donna Smatlak ,  Joseph C. Olson

    发明人： Atul Gupta ,  Anthony Renau ,  Donna Smatlak ,  Joseph C. Olson

    IPC分类号： H01J37/317 ,  H01L21/265

    CPC分类号： H01J37/3171 ,  H01J37/302 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

    摘要： A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.

    摘要翻译： 公开了一种改善离子注入通量和剂量均匀性的技术。 在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。 该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动 在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。 该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

    USE OF DOPANTS WITH DIFFERENT DIFFUSIVITIES FOR SOLAR CELL MANUFACTURE
    9.
    发明申请
    USE OF DOPANTS WITH DIFFERENT DIFFUSIVITIES FOR SOLAR CELL MANUFACTURE 有权
    用于太阳能电池制造的不同扩散剂的使用

    公开(公告)号：US20090227097A1

    公开(公告)日：2009-09-10

    申请号：US12397542

    申请日：2009-03-04

    申请人： Nicholas Bateman ,  Atul Gupta ,  Christopher Hatem ,  Deepak Ramappa

    发明人： Nicholas Bateman ,  Atul Gupta ,  Christopher Hatem ,  Deepak Ramappa

    IPC分类号： H01L21/22

    CPC分类号： H01L33/025 ,  H01L21/26513 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/03529 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.

    摘要翻译： 公开了通过利用两种不同的掺杂剂来调整衬底的掺杂剂分布的方法，每种掺杂剂具有不同的扩散率。 衬底可以是例如太阳能电池。 通过引入两种不同的掺杂剂，例如通过离子注入，炉扩散或糊状物，可以产生所需的掺杂剂分布。 此外，掺杂剂可以同时，部分同时或顺序地引入。 掺杂剂对优选由一种较轻的物质和一种较重的物质组成，其中较轻的物质具有较大的扩散系数。 例如，可以使用诸如硼和镓，硼和铟，磷和砷的掺杂物对，以及磷和锑。

    Self-aligned ion implantation for IBC solar cells
    10.
    发明授权
    Self-aligned ion implantation for IBC solar cells 有权
    IBC太阳能电池的自对准离子注入

    公开(公告)号：US08735234B2

    公开(公告)日：2014-05-27

    申请号：US13028562

    申请日：2011-02-16

    申请人： Atul Gupta ,  Nicholas Bateman

    发明人： Atul Gupta ,  Nicholas Bateman

    IPC分类号： H01L21/338 ,  H01L21/8238 ,  H01L21/8242

    CPC分类号： H01L21/2254 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/1804 ,  Y02P70/521

    摘要： An improved method of doping a substrate is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A paste having a dopant of a first conductivity is applied to the surface of the substrate. This paste serves as a mask for a subsequent ion implantation step, allowing ions of a dopant having an opposite conductivity to be introduced to the portions of the substrate which are exposed. After the ions are implanted, the mask can be removed and the dopants may be activated. Methods of using an aluminum-based and phosphorus-based paste are disclosed.

    摘要翻译： 公开了改进的掺杂衬底的方法。 该方法特别有利于产生叉指式背接触（IBC）太阳能电池。 将具有第一导电性的掺杂剂的糊剂施加到基板的表面。 该糊剂用作随后的离子注入步骤的掩模，允许具有相反电导率的掺杂剂的离子被引入到暴露的衬底的部分。 离子注入后，可以去除掩模，并且可以激活掺杂剂。 公开了使用铝基和磷基糊的方法。