发明申请
- 专利标题: APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION
- 专利标题(中): 用于原子层沉积的装置和方法
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申请号: US12494901申请日: 2009-06-30
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公开(公告)号: US20100003406A1公开(公告)日: 2010-01-07
- 发明人: Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
- 申请人: Hyman Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong (John) Yuan , Hou Gong Wang , Salvador P. Umotoy , Sang Ho Yu
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: C23C16/34
- IPC分类号: C23C16/34
摘要:
Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
公开/授权文献
- US08291857B2 Apparatuses and methods for atomic layer deposition 公开/授权日:2012-10-23