Apparatuses and methods for atomic layer deposition
    1.
    发明授权
    Apparatuses and methods for atomic layer deposition 有权
    用于原子层沉积的装置和方法

    公开(公告)号:US08291857B2

    公开(公告)日:2012-10-23

    申请号:US12494901

    申请日:2009-06-30

    摘要: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

    摘要翻译: 本发明的实施例提供了诸如等离子体增强型ALD(PE-ALD)的原子层沉积(ALD)的装置和方法。 在一些实施例中,提供了一种PE-ALD室,其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中,室盖组件具有入口歧管组件,其包含围绕集中通道的环形通道,其中集中通道延伸穿过入口歧管组件,并且入口歧管组件还包含从环形通道延伸的注入孔, 集中通道侧壁,集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件,设置在入口歧管组件和喷头组件之间的水箱,以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统(RPS) 与集中通道的流体通信。

    APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION
    2.
    发明申请
    APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION 有权
    用于原子层沉积的装置和方法

    公开(公告)号:US20130008984A1

    公开(公告)日:2013-01-10

    申请号:US13618741

    申请日:2012-09-14

    IPC分类号: C23C16/455

    摘要: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

    摘要翻译: 本发明的实施例提供了诸如等离子体增强型ALD(PE-ALD)的原子层沉积(ALD)的装置和方法。 在一些实施例中,提供了一种PE-ALD室,其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中,室盖组件具有入口歧管组件,其包含围绕集中通道的环形通道,其中集中通道延伸穿过入口歧管组件,并且入口歧管组件还包含从环形通道延伸的注入孔, 集中通道侧壁,集中通道。 室盖组件还包括布置在入口歧管组件下方的喷头组件,设置在入口歧管组件和喷头组件之间的水箱,以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统(RPS) 与集中通道的流体通信。

    APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION
    3.
    发明申请
    APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION 有权
    用于原子层沉积的装置和方法

    公开(公告)号:US20100003406A1

    公开(公告)日:2010-01-07

    申请号:US12494901

    申请日:2009-06-30

    IPC分类号: C23C16/34

    摘要: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

    摘要翻译: 本发明的实施例提供了诸如等离子体增强型ALD(PE-ALD)的原子层沉积(ALD)的装置和方法。 在一些实施例中,提供了一种PE-ALD室,其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中,室盖组件具有入口歧管组件,其包含围绕集中通道的环形通道,其中集中通道延伸穿过入口歧管组件,并且入口歧管组件还包含从环形通道延伸的注入孔, 集中通道侧壁,集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件,设置在入口歧管组件和喷头组件之间的水箱,以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统(RPS) 与集中通道的流体通信。

    APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION
    4.
    发明申请
    APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION 有权
    用于原子层沉积的装置和方法

    公开(公告)号:US20120000422A1

    公开(公告)日:2012-01-05

    申请号:US13232317

    申请日:2011-09-14

    IPC分类号: C23C16/455 F17D1/20

    摘要: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

    摘要翻译: 本发明的实施例提供了诸如等离子体增强型ALD(PE-ALD)的原子层沉积(ALD)的装置和方法。 在一些实施例中,提供了一种PE-ALD室,其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中,室盖组件具有入口歧管组件,其包含围绕集中通道的环形通道,其中集中通道延伸穿过入口歧管组件,并且入口歧管组件还包含从环形通道延伸的注入孔, 集中通道侧壁,集中通道。 腔室盖组件还包括设置在入口歧管组件下方的喷头组件,设置在入口歧管组件和喷头组件之间的水箱,以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统(RPS) 与集中通道的流体通信。