Invention Application
US20100006837A1 COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR
审中-公开
用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造晶体管的方法
- Patent Title: COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR
- Patent Title (中): 用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造晶体管的方法
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Application No.: US12496558Application Date: 2009-07-01
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Publication No.: US20100006837A1Publication Date: 2010-01-14
- Inventor: Doo Hee Cho , Sang Hee Park , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho , Shin Hyuk Yang , Chun Won Byun , Eun Suk Park , Oh Sang Kwon , Min Ki Ryu , Jae Heon Shin , Woo Seok Cheong , Sung Mook Chung , Jeong Ik Lee
- Applicant: Doo Hee Cho , Sang Hee Park , Chi Sun Hwang , Hye Yong Chu , Kyoung Ik Cho , Shin Hyuk Yang , Chun Won Byun , Eun Suk Park , Oh Sang Kwon , Min Ki Ryu , Jae Heon Shin , Woo Seok Cheong , Sung Mook Chung , Jeong Ik Lee
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2008-0066488 20080709; KR10-2008-0071163 20080722
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/336 ; H01B1/08
Abstract:
Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.
Information query
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