公开(公告)号：US20100006837A1

公开(公告)日：2010-01-14

申请号：US12496558

申请日：2009-07-01

申请人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

发明人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01B1/08

CPC分类号： H01L29/7869 ,  C23C14/08 ,  H01L29/247

摘要： Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

摘要翻译： 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。 该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。 由组合物形成的薄膜是非晶相。 具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

公开(公告)号：US20090261389A1

公开(公告)日：2009-10-22

申请号：US12331688

申请日：2008-12-10

申请人： Doo Hee Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Doo Hee Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01L29/78 ,  H01L21/8232 ,  H01B1/02

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： A composition for an oxide semiconductor thin film, a field effect transistor (FET) using the composition, and a method of fabricating the FET are provided. The composition includes an aluminum oxide, a zinc oxide, and a tin oxide. The thin film formed of the composition remains in amorphous phase at a temperature of 400° C or less. The FET using an active layer formed of the composition has improved electrical characteristics and can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.

摘要翻译： 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管（FET）及其制造方法。 该组合物包括氧化铝，氧化锌和氧化锡。 由组合物形成的薄膜在400℃以下的温度下保持非晶相。 使用由组合物形成的有源层的FET具有改善的电特性，并且可以使用低温工艺制造而不昂贵的原料，例如In和Ga。

公开(公告)号：US08017045B2

公开(公告)日：2011-09-13

申请号：US12331688

申请日：2008-12-10

申请人： Doo Hee Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Doo Hee Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01B1/02

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and remaining molar percentage of an aluminum oxide (AlOx). The thin film formed of the composition remains in amorphous phase at a temperature of 400° C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.

摘要翻译： 提供了使用该组合物的氧化物半导体薄膜和场效应晶体管（FET）的组合物。 该组合物包含约50-约99mol％的氧化锌（ZnO）; 约0.5〜49.5摩尔％的氧化锡（SnO x）; 和氧化铝（AlOx）的剩余摩尔百分数。 由该组合物形成的薄膜在400℃以下的温度下保持为非晶相。 FET包括由该组合物形成的有源层并具有改善的电特性。 可以使用低温工艺制造FET，而不需要昂贵的原材料，例如In和Ga。

公开(公告)号：US20100243994A1

公开(公告)日：2010-09-30

申请号：US12555986

申请日：2009-09-09

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L27/115 ,  H01L51/10 ,  H01L29/12 ,  H01L21/8246

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US20120225500A1

公开(公告)日：2012-09-06

申请号：US13469558

申请日：2012-05-11

申请人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L51/40

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US08198625B2

公开(公告)日：2012-06-12

申请号：US12555986

申请日：2009-09-09

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L35/24

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US08476106B2

公开(公告)日：2013-07-02

申请号：US13469558

申请日：2012-05-11

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L51/40

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US08242677B2

公开(公告)日：2012-08-14

申请号：US13105345

申请日：2011-05-11

申请人： Hye Yong Chu ,  Jeong Ik Lee ,  Doo Hee Cho ,  Jun Han Han ,  Joo Won Lee ,  Jin Wook Shin ,  Jong Hee Lee

发明人： Hye Yong Chu ,  Jeong Ik Lee ,  Doo Hee Cho ,  Jun Han Han ,  Joo Won Lee ,  Jin Wook Shin ,  Jong Hee Lee

IPC分类号： H01J1/52 ,  H01J19/40

CPC分类号： H01L51/5203 ,  H01L51/524 ,  H01L51/5243 ,  H01L51/5246 ,  H01L2251/5361 ,  H01L2251/566

摘要： Provided is an organic light emitting diode (OLED) panel for lighting, including an organic layer emitting light by reaction in response to power supplied by a positive electrode and a negative electrode, a protection cap protecting the organic layer from external moisture and oxygen, a cover film attached to upper surfaces of the positive electrode and negative electrode, and serving as a ground for the positive electrode and the negative electrode, and a conductive metal layer grounding the positive electrode and the negative electrode to the cover film.

摘要翻译： 提供了一种用于照明的有机发光二极管（OLED）面板，包括响应于由正电极和负电极提供的电力进行反应而发光的有机层，保护有机层免受外部水分和氧气的保护帽， 覆盖膜附接到正极和负极的上表面，并且用作正极和负极的接地，导电金属层将正极和负极接地到覆盖膜。

公开(公告)号：US08421064B2

公开(公告)日：2013-04-16

申请号：US13078095

申请日：2011-04-01

申请人： Jun Han Han ,  Hye Yong Chu ,  Jeong Ik Lee ,  Doo Hee Cho ,  Jong Hee Lee ,  Joo Won Lee ,  Jin Wook Shin

发明人： Jun Han Han ,  Hye Yong Chu ,  Jeong Ik Lee ,  Doo Hee Cho ,  Jong Hee Lee ,  Joo Won Lee ,  Jin Wook Shin

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H05B33/10 ,  H01L27/3288 ,  H01L51/5212 ,  H01L51/5228 ,  H01L51/56 ,  H05B33/26

摘要： Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.

摘要翻译： 提供一种有机发光二极管（OLED）平板光源装置及其制造方法。 该装置包括阳极和阴极，外部施加的功率被供应到其上，设置在基板上，有机发射层（EML）插入在阳极和阴极之间并且被配置为由于通过阳极提供的功率而发光， 阴极和辅助电极层，其包括结合到阳极或阴极的多个辅助电极，并且被配置为向阳极或阴极供电或者与阳极或阴极电绝缘并且被配置为向其它发射区域供电。

公开(公告)号：US08408960B2

公开(公告)日：2013-04-02

申请号：US13405779

申请日：2012-02-27

申请人： Doo Hee Cho ,  Jeong Ik Lee ,  Jin Wook Shin ,  Jong Hee Lee ,  Hye Yong Chu ,  Joo Won Lee ,  Jun Han Han

发明人： Doo Hee Cho ,  Jeong Ik Lee ,  Jin Wook Shin ,  Jong Hee Lee ,  Hye Yong Chu ,  Joo Won Lee ,  Jun Han Han

IPC分类号： H01J9/18

CPC分类号： H01L51/5275

摘要： A method of fabricating an organic light emitting diode using phase separation. The method includes preparing a transparent substrate. A first light path control layer is formed on the transparent substrate. The first light path control layer includes a mixture of a first medium and a second medium having a lower refractive index than the first medium using the phase separation. An anode, an organic emission layer, and a cathode are sequentially stacked on the first light path control layer. In this method, an OLED with improved light extraction efficiency can be fabricated using a simple and inexpensive process.

摘要翻译： 使用相分离制造有机发光二极管的方法。 该方法包括制备透明基底。 在透明基板上形成第一光路控制层。 第一光路控制层包括第一介质和第二介质的混合物，其具有比使用相分离的第一介质更低的折射率。 阳极，有机发光层和阴极依次堆叠在第一光路控制层上。 在该方法中，可以使用简单且廉价的工艺来制造具有提高光提取效率的OLED。