发明申请
- 专利标题： METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTURES FABRICATED THEREBY
- 专利标题（中）： 松弛和转移应变层和结构的方法
-
申请号： US12341852申请日： 2008-12-22
-
公开(公告)号： US20100032793A1公开(公告)日： 2010-02-11
- 发明人: Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
- 申请人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
- 优先权： EPEP08290759.3 20080806
- 主分类号： H01L27/00
- IPC分类号： H01L27/00 ; H01L21/02 ; H01L21/46
摘要：
The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.
公开/授权文献
信息查询
IPC分类:
