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13 条记录 (耗时 0.028 秒)

    Passivation of semiconductor structures having strained layers
    7.
    发明授权
    Passivation of semiconductor structures having strained layers 失效
    具有应变层的半导体结构的钝化

    公开(公告)号：US07736935B2

    公开(公告)日：2010-06-15

    申请号：US12341806

    申请日：2008-12-22

    申请人： Bruce Faure ,  Pascal Guenard

    发明人： Bruce Faure ,  Pascal Guenard

    IPC分类号： H01L21/02

    CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L33/44 ,  H01S5/3072

    摘要： The present invention provides, in part, methods producing multilayer semiconductor structures having one or more at least partially relaxed strained layers, where the strained layer is at least partially relaxed by annealing. In particular, the invention forms diffusion barriers that prevent diffusion of contaminants during annealing. The invention also includes embodiments where the at least partially relaxed strained layer is patterned into islands by etching trenches and the like. The invention also provides semiconductor structures resulting from these methods, and further, provides such structures where the semiconductor materials are suitable for application to LED devices, laser devices, photovoltaic devices, and other optoelectronic devices.

    摘要翻译： 本发明部分地提供了生产具有一个或多个至少部分松弛的应变层的多层半导体结构的方法，其中应变层通过退火至少部分地松弛。 特别地，本发明形成了防止退火期间污染物扩散的扩散阻挡层。 本发明还包括其中通过蚀刻沟槽等将至少部分松弛的应变层图案化成岛的实施例。 本发明还提供由这些方法产生的半导体结构，并且还提供这样的结构，其中半导体材料适用于LED器件，激光器件，光伏器件和其它光电器件。

    PASSIVATION OF SEMICONDUCTOR STRUCTURES HAVING STRAINED LAYERS
    8.
    发明申请
    PASSIVATION OF SEMICONDUCTOR STRUCTURES HAVING STRAINED LAYERS 失效
    具有应变层的半导体结构的钝化

    公开(公告)号：US20100035418A1

    公开(公告)日：2010-02-11

    申请号：US12341806

    申请日：2008-12-22

    申请人： Bruce FAURE ,  Pascal Guenard

    发明人： Bruce FAURE ,  Pascal Guenard

    IPC分类号： H01L21/20

    CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L33/44 ,  H01S5/3072

    摘要： The present invention provides, in part, methods producing multilayer semiconductor structures having one or more at least partially relaxed strained layers, where the strained layer is at least partially relaxed by annealing. In particular, the invention forms diffusion barriers that prevent diffusion of contaminants during annealing. The invention also includes embodiments where the at least partially relaxed strained layer is patterned into islands by etching trenches and the like. The invention also provides semiconductor structures resulting from these methods, and further, provides such structures where the semiconductor materials are suitable for application to LED devices, laser devices, photovoltaic devices, and other optoelectronic devices.

    摘要翻译： 本发明部分地提供了生产具有一个或多个至少部分松弛的应变层的多层半导体结构的方法，其中应变层通过退火至少部分地松弛。 特别地，本发明形成了防止退火期间污染物扩散的扩散阻挡层。 本发明还包括其中通过蚀刻沟槽等将至少部分松弛的应变层图案化成岛的实施例。 本发明还提供由这些方法产生的半导体结构，并且还提供这样的结构，其中半导体材料适用于LED器件，激光器件，光伏器件和其它光电器件。

    METHOD FOR RECYCLING A SOURCE SUBSTRATE
    9.
    发明申请
    METHOD FOR RECYCLING A SOURCE SUBSTRATE 审中-公开
    回收源基板的方法

    公开(公告)号：US20120199956A1

    公开(公告)日：2012-08-09

    申请号：US13368028

    申请日：2012-02-07

    申请人： Monique Lecomte ,  Pascal Guenard ,  Sophie Rigal ,  David Sotta ,  Fabienne Janin ,  Christelle Veytizou

    发明人： Monique Lecomte ,  Pascal Guenard ,  Sophie Rigal ,  David Sotta ,  Fabienne Janin ,  Christelle Veytizou

    IPC分类号： H01L29/02 ,  H01L21/762 ,  H01L21/02

    CPC分类号： H01L21/76254 ,  H01L21/02032

    摘要： The present invention relates to process for recycling a source substrate that has a surface region and regions in relief on the surface region, with the regions in relief corresponding to residual regions of a layer of the source substrate that were not being separated from the rest of the source substrate during a prior removal step. The process includes selective electromagnetic irradiation of the source substrate at a wavelength such that the damaged material of the surface region absorbs the electromagnetic irradiation. The present invention also relates to a recycled source substrate and to a process for transferring a layer from a source substrate recycled for this purpose.

    摘要翻译： 本发明涉及一种用于再循环源衬底的方法，该源衬底具有表面区域和在表面区域上的浮雕区域，其中缓冲区域对应于源衬底层的剩余区域，其不与其余部分分离 在先前的去除步骤期间的源极衬底。 该方法包括以使得表面区域的损伤材料吸收电磁辐射的波长的源极基板的选择性电磁辐射。 本发明还涉及一种再循环源底物和用于从为此目的回收的源底物转移层的方法。

    Adaptation of the lattice parameter of a layer of strained material
    10.
    发明授权
    Adaptation of the lattice parameter of a layer of strained material 有权
    适应一层应变材料的晶格参数

    公开(公告)号：US08785293B2

    公开(公告)日：2014-07-22

    申请号：US13147749

    申请日：2010-02-15

    申请人： Pascal Guenard ,  Frederic Dupont

    发明人： Pascal Guenard ,  Frederic Dupont

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76251

    摘要： The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A1, of nominal lattice parameter An and of thermal expansion coefficient CTE3, a low-viscosity layer and an intermediate substrate of thermal expansion coefficient CTE1; b) a heat treatment is applied so as to relax the seed layer of strained material; and c) the seed layer is transferred onto a support substrate of thermal expansion coefficient CTE5, the intermediate substrate and the support substrate being chosen so that A1 CTE1 or A1>An and CTE1≧CTE3 and CTE5

    摘要翻译： 本发明涉及一种适应应变材料的晶种层的晶格参数的方法，包括以下连续步骤：a）提供具有晶格参数A1的应变材料种子层的标称晶格参数的结构 A和热膨胀系数CTE3，低粘度层和热膨胀系数CTE1的中间基板; b）施加热处理以松弛应变材料的种子层; c）将种子层转移到热膨胀系数CTE5的支撑基板上，选择中间基板和支撑基板，使得A1＆amp; An和CTE1＆amp; CTE3和CTE5> CTE1或A1> An和CTE1≥CTE3和CTE5