发明申请
- 专利标题: THREE-DIMENSIONAL CONDUCTING STRUCTURE AND METHOD OF FABRICATING THE SAME
- 专利标题(中): 三维导电结构及其制作方法
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申请号: US12500780申请日: 2009-07-10
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公开(公告)号: US20100032830A1公开(公告)日: 2010-02-11
- 发明人: Hsiang-Hung Chang , Shu-Ming Chang , Tzu-Ying Kuo , Yuan-Chang Lee
- 申请人: Hsiang-Hung Chang , Shu-Ming Chang , Tzu-Ying Kuo , Yuan-Chang Lee
- 申请人地址: TW Hsinchu
- 专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址: TW Hsinchu
- 优先权: TW97129949 20080806; CN200810213229.8 20080815
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/768
摘要:
The three-dimensional conducting structure comprises a substrate, a first redistributed conductor, a second redistributed conductor and an insulator. The substrate has an active surface, a passive surface opposite to the active one, a pad on the active surface and a through hole. The first redistributed conductor comprises a projecting portion and a receiving portion. The projecting portion is projected from the active surface and electrically connected to the pad. The receiving portion is outside the active surface and in contact with the projecting portion, both of which constitute a recess communicating with the through hole. The second redistributed conductor is positioned within the through hole and the recess, in contact with the receiving portion, and extended toward the passive surface along the through hole. The insulator is filled between the second redistributed conductor and the substrate and between the second redistributed conductor and the projecting portion.
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