发明申请
- 专利标题： Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type
- 专利标题（中）： 具有改性表面性质的硅衬底的制造方法和所述类型的硅衬底
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申请号： US12308200申请日： 2007-04-27
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公开(公告)号： US20100035068A1公开(公告)日： 2010-02-11
- 发明人: Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
- 申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
- 优先权： DE102006028921.8 20060623
- 国际申请： PCT/EP2007/054172 WO 20070427
- 主分类号： C25D5/00
- IPC分类号： C25D5/00 ; B32B17/06 ; H01L21/30
摘要：
A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.