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    MEMS with single use valve and method of operation
    4.
    发明授权
    MEMS with single use valve and method of operation 有权
    MEMS单用阀和操作方法

    公开(公告)号：US08779533B2

    公开(公告)日：2014-07-15

    申请号：US13180954

    申请日：2011-07-12

    申请人： Ando Feyh ,  Po-Jui Chen

    发明人： Ando Feyh ,  Po-Jui Chen

    IPC分类号： H01L29/84

    CPC分类号： F16K99/003 ,  F16K99/0044

    摘要： In one embodiment, a method of opening a passageway to a cavity includes providing a donor portion, forming a heating element adjacent to the donor portion, forming a first sacrificial slab abutting the donor portion, wherein the donor portion and the sacrificial slab are a shrinkable pair, forming a first cavity, a portion of the first cavity bounded by the first sacrificial slab, generating heat with the heating element, forming a first reduced volume slab from the first sacrificial slab using the generated heat and the donor portion, and forming a passageway to the first cavity by forming the first reduced volume slab.

    摘要翻译： 在一个实施例中，将通道打开到空腔的方法包括提供供体部分，形成邻近供体部分的加热元件，形成邻接供体部分的第一牺牲板，其中供体部分和牺牲板是可收缩的 形成第一空腔，由第一牺牲板限定的第一空腔的一部分，用加热元件产生热量，使用产生的热量和供体部分从第一牺牲板形成第一减小体积的板坯，并形成 通过形成第一减小体积的板坯到第一空腔的通道。

    Sensor and method for its production
    5.
    发明授权
    Sensor and method for its production 有权
    传感器及其生产方法

    公开(公告)号：US08749013B2

    公开(公告)日：2014-06-10

    申请号：US12302677

    申请日：2007-04-23

    申请人： Hubert Benzel ,  Simon Armbruster ,  Arnim Hoechst ,  Christoph Schelling ,  Ando Feyh

    发明人： Hubert Benzel ,  Simon Armbruster ,  Arnim Hoechst ,  Christoph Schelling ,  Ando Feyh

    IPC分类号： H01L31/058

    CPC分类号： B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2207/015 ,  B81C2201/0109 ,  G01J5/06 ,  G01J5/20

    摘要： A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm.

    摘要翻译： 特别是用于空间分辨检测的传感器包括基板，至少一个微图案化的传感器元件，其具有值随温度变化的电特性，以及在空腔上方的至少一个隔膜，传感器元件设置在 所述至少一个隔膜的下侧，并且所述传感器元件经由连接线接触，所述连接线在隔膜的顶部或下方延伸。 特别地，多个传感器元件可以形成为通过外延形成的单晶层内的二极管像素。 可以在隔膜内形成以弹性和绝缘方式容纳各个传感器元件的悬挂弹簧。

    Thermally decoupled micro-structured reference element for sensors
    6.
    发明授权
    Thermally decoupled micro-structured reference element for sensors 有权
    用于传感器的热分解微结构参考元件

    公开(公告)号：US08556504B2

    公开(公告)日：2013-10-15

    申请号：US13061670

    申请日：2009-07-02

    申请人： Ingo Herrmann ,  Daniel Herrmann ,  Frank Freund ,  Ando Feyh ,  Martin Eckardt

    发明人： Ingo Herrmann ,  Daniel Herrmann ,  Frank Freund ,  Ando Feyh ,  Martin Eckardt

    IPC分类号： G01K7/00 ,  B32B3/00

    CPC分类号： H01L27/14669 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/06 ,  G01J5/20 ,  H01L31/09

    摘要： A micro-structured reference element for use in a sensor having a substrate and a dielectric membrane. The reference element has an electrical property which changes its value on the basis of temperature. The reference element is arranged with respect to the substrate so that the reference element is (i) electrically insulated from the substrate, and (ii) thermally coupled to the substrate. The reference element is arranged on the underside of the dielectric membrane. The reference element and side walls of the substrate define a circumferential cavern therebetween, which is also bounded by the dielectric membrane, arranged between them. The dielectric membrane is connected to the substrate. A surface area of the reference element which is covered by the dielectric membrane is greater than or equal to 10% and less than or equal to 100% of the possible coverable surface area. A surface of the cavern which is covered by the dielectric membrane is greater than or equal to 50% and less than or equal to 100% of the possible coverable surface. An edge of the reference element which faces the dielectric membrane has greater than or equal to 50% and less than or equal to 100% of its extent contacted by the dielectric membrane. Sections of the side walls of the cavern which face the dielectric membrane have greater than or equal to 50% and less than or equal to 100% of the possible size contacted by the dielectric membrane.

    摘要翻译： 一种用于具有基底和电介质膜的传感器中的微结构参考元件。 参考元件具有基于温度改变其值的电性质。 参考元件相对于衬底布置，使得参考元件（i）与衬底电绝缘，和（ii）热耦合到衬底。 参考元件布置在电介质膜的下侧。 衬底的参考元件和侧壁在它们之间限定周向的洞穴，它们也被布置在它们之间的电介质膜界定。 电介质膜与基板连接。 由电介质膜覆盖的参考元件的表面积大于或等于可能可覆盖表面积的10％且小于或等于100％。 由电介质膜覆盖的洞穴的表面大于或等于可能可覆盖表面的50％且小于或等于100％。 面向电介质膜的参考元件的边缘具有大于或等于其与电介质膜接触的程度的50％且小于或等于100％。 面向电介质膜的洞穴的侧壁的截面具有大于或等于电介质膜接触的可能尺寸的50％且小于或等于100％。

    Piezoresistive Micromechanical Sensor Component and Corresponding Measuring Method
    7.
    发明申请
    Piezoresistive Micromechanical Sensor Component and Corresponding Measuring Method 有权
    压电微机械传感器部件及相应的测量方法

    公开(公告)号：US20130098154A1

    公开(公告)日：2013-04-25

    申请号：US13635581

    申请日：2011-01-19

    申请人： Reinhard Neul ,  Christian Rettig ,  Achim Trautmann ,  Daniel Christoph Meisel ,  Alexander Buhmann ,  Manuel Engesser ,  Ando Feyh

    发明人： Reinhard Neul ,  Christian Rettig ,  Achim Trautmann ,  Daniel Christoph Meisel ,  Alexander Buhmann ,  Manuel Engesser ,  Ando Feyh

    IPC分类号： G01P15/09

    CPC分类号： G01P15/09 ,  G01P15/0802 ,  G01P15/12 ,  G01P15/123

    摘要： A piezoresistive micromechanical sensor component includes a substrate, a seismic mass, at least one piezoresistive bar, and a measuring device. The seismic mass is suspended from the substrate such that it can be deflected. The at least one piezoresistive bar is provided between the substrate and the seismic mass and is subject to a change in resistance when the seismic mass is deflected. The at least one piezoresistive bar has a lateral and/or upper and/or lower conductor track which at least partially covers the piezoresistive bar and extends into the region of the substrate. The measuring device is electrically connected to the substrate and to the conductor track and is configured to measure the change in resistance over a circuit path which runs from the substrate through the piezoresistive bar and from the piezoresistive bar through the lateral and/or upper and/or lower conductor track.

    摘要翻译： 压阻微机电传感器部件包括基板，抗震块，至少一个压阻棒和测量装置。 地震质量从基板悬挂使其能够偏转。 所述至少一个压阻棒设置在所述基底和所述抗震块之间，并且当所述地震质量被偏转时，所述至少一个压阻棒经受阻力的变化。 至少一个压阻棒具有至少部分地覆盖压阻棒并延伸到衬底的区域中的横向和/或上部和/或下部导体轨道。 测量装置电连接到基板和导体轨道，并且被配置成测量电路的电阻变化，该电阻通过基板通过压阻棒和从压阻棒通过横向和/或上部和/ 或下导体轨道。

    Sensor and method for the manufacture thereof
    8.
    发明授权
    Sensor and method for the manufacture thereof 有权
    传感器及其制造方法

    公开(公告)号：US08334534B2

    公开(公告)日：2012-12-18

    申请号：US12590585

    申请日：2009-11-10

    申请人： Jochen Reinmuth ,  Neil Davies ,  Simon Armbruster ,  Ando Feyh

    发明人： Jochen Reinmuth ,  Neil Davies ,  Simon Armbruster ,  Ando Feyh

    IPC分类号： H01L31/101

    CPC分类号： G01J5/20 ,  G01J5/08 ,  G01J5/0853 ,  H01L27/14649

    摘要： A sensor includes at least one micro-patterned diode pixel that has a diode implemented in, on, or under a diaphragm, and the diaphragm in turn being implemented above a cavity. The diode is contacted via supply leads that are implemented at least in part in, on, or under the diaphragm, and the diode is implemented in a polycrystalline semiconductor layer. The diode is implemented by way of two low-doped diode regions or at least one low-doped diode region. At least parts of the supply leads are implemented by way of highly doped supply lead regions of the shared polycrystalline semiconductor layer.

    摘要翻译： 传感器包括至少一个微图案化的二极管像素，其具有在隔膜内，上或下面实现的二极管，并且隔膜依次在空腔上方实现。 二极管通过至少部分地在隔膜中，上或下面实现的电源引线接触，并且二极管实现在多晶半导体层中。 二极管通过两个低掺杂二极管区域或至少一个低掺杂二极管区域实现。 供电线的至少一部分通过共享多晶半导体层的高掺杂电源引线区实现。

    Micromechanical component and method for its production
    9.
    发明授权
    Micromechanical component and method for its production 有权
    微机械部件及其生产方法

    公开(公告)号：US08165324B2

    公开(公告)日：2012-04-24

    申请号：US12227385

    申请日：2007-04-02

    申请人： Ando Feyh ,  Marco Lammer

    发明人： Ando Feyh ,  Marco Lammer

    IPC分类号： H04R25/00

    CPC分类号： B81C1/00246 ,  B81B2201/0257 ,  B81C2203/0735 ,  H04R19/005 ,  H04R31/00 ,  H04R2410/00

    摘要： A cost-effective technology for implementing a micromechanical component is provided, whose layer construction includes at least one diaphragm on the upper side and at least one counter-element, a hollow space being formed between the diaphragm and the counter-element, and the counter-element having at least one through hole to a back volume. This back volume is formed by a sealed additional hollow space underneath the counter-element and is connected to the upper-side of the layer construction by at least one pressure equalization opening. This component structure permits the integration of the micromechanical sensor functions and evaluation electronics on one chip and is additionally suitable for mass production.

    摘要翻译： 提供了一种用于实现微机械部件的成本有效的技术，其层结构包括在上侧上的至少一个隔膜和至少一个反元件，在隔膜和反元件之间形成的中空空间，以及计数器 - 具有至少一个通孔到后部体积的元件。 该后体积由相对元件下方的密封的附加中空空间形成，并且通过至少一个压力平衡开口连接到层结构的上侧。 该组件结构允许将微机械传感器功能和评估电子器件集成在一个芯片上，并且另外适合于批量生产。

    Inertial sensor having a field effect transistor
    10.
    发明申请
    Inertial sensor having a field effect transistor 审中-公开
    具有场效应晶体管的惯性传感器

    公开(公告)号：US20110057236A1

    公开(公告)日：2011-03-10

    申请号：US12804981

    申请日：2010-08-02

    申请人： Ando Feyh

    发明人： Ando Feyh

    IPC分类号： H01L29/84 ,  H01L21/64

    CPC分类号： G01P15/124 ,  G01C19/56 ,  G01P15/0802

    摘要： An inertial sensor, having a field effect transistor which includes a gate electrode (9), a source electrode (3a′,3a″,3a′″), a drain electrode (3b′,3b″,3b′″) and a channel area (4) situated between the source electrode (3a′,3a″,3a′″) and the drain electrode (3b′,3b″,3b′″) and whose gate electrode (9) is situated at a distance above the channel area (4). The gate electrode (9) is designed and situated to be stationary and the channel area (4) is designed and situated to be movable. Furthermore, the present invention also relates to a method for manufacturing a motion sensor of this type.

    摘要翻译： 一种具有场效应晶体管的惯性传感器，其包括栅电极（9），源电极（3a'，3a“，3a”“），漏电极（3b'，3b”，3b“”） 位于源电极（3a'，3a“，3a”“之间的区域（4）和漏电极（3b'，3b”，3b“”）之间，其栅电极（9）位于通道 区域（4）。 栅电极（9）被设计和定位成静止的，并且通道区域（4）被设计和定位成可移动的。 此外，本发明还涉及这种类型的运动传感器的制造方法。