发明申请
US20100048015A1 Methods of Forming Void-Free Layers in Openings of Semiconductor Substrates
失效
在半导体衬底的开口中形成无空隙层的方法
- 专利标题： Methods of Forming Void-Free Layers in Openings of Semiconductor Substrates
- 专利标题（中）： 在半导体衬底的开口中形成无空隙层的方法
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申请号： US12608579申请日： 2009-10-29
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公开(公告)号： US20100048015A1公开(公告)日： 2010-02-25
- 发明人: Jung-Hwan Kim , Hun-Hyeoung Leam , Jai-Dong Lee , Young-Seok Kim , Young-Sub You , Ki-Su Na , Woong Lee
- 申请人： Jung-Hwan Kim , Hun-Hyeoung Leam , Jai-Dong Lee , Young-Seok Kim , Young-Sub You , Ki-Su Na , Woong Lee
- 优先权： KR2004-0043937 20040615
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/283
摘要：
In a method of manufacturing a floating gate of a non-volatile semiconductor memory, a pattern is formed on a substrate to have an opening that exposes a portion of the substrate. A first preliminary polysilicon layer is formed on the pattern and the exposed portion of the substrate to substantially fill the opening. A first polysilicon layer is formed by partially etching the first preliminary polysilicon layer until a first void formed in the first preliminary polysilicon layer is exposed. A second polysilicon layer is formed on the first polysilicon layer.
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