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14 条记录 (耗时 0.018 秒)

    Methods of forming void-free layers in openings of semiconductor substrates
    1.
    发明授权
    Methods of forming void-free layers in openings of semiconductor substrates 失效
    在半导体衬底的开口中形成无空隙层的方法

    公开(公告)号：US07902059B2

    公开(公告)日：2011-03-08

    申请号：US12608579

    申请日：2009-10-29

    申请人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Jai-Dong Lee ,  Young-Seok Kim ,  Young-Sub You ,  Ki-Su Na ,  Woong Lee

    发明人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Jai-Dong Lee ,  Young-Seok Kim ,  Young-Sub You ,  Ki-Su Na ,  Woong Lee

    IPC分类号： H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L27/11521 ,  H01L27/115

    摘要： In a method of manufacturing a floating gate of a non-volatile semiconductor memory, a pattern is formed on a substrate to have an opening that exposes a portion of the substrate. A first preliminary polysilicon layer is formed on the pattern and the exposed portion of the substrate to substantially fill the opening. A first polysilicon layer is formed by partially etching the first preliminary polysilicon layer until a first void formed in the first preliminary polysilicon layer is exposed. A second polysilicon layer is formed on the first polysilicon layer.

    摘要翻译： 在制造非易失性半导体存储器的浮置栅极的方法中，在衬底上形成图案以具有露出衬底的一部分的开口。 在图案和基板的暴露部分上形成第一初步多晶硅层以基本上填充开口。 通过部分地蚀刻第一初步多晶硅层直到形成在第一初步多晶硅层中的第一空穴露出来形成第一多晶硅层。 在第一多晶硅层上形成第二多晶硅层。

    Methods of Forming Void-Free Layers in Openings of Semiconductor Substrates
    2.
    发明申请
    Methods of Forming Void-Free Layers in Openings of Semiconductor Substrates 失效
    在半导体衬底的开口中形成无空隙层的方法

    公开(公告)号：US20100048015A1

    公开(公告)日：2010-02-25

    申请号：US12608579

    申请日：2009-10-29

    申请人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Jai-Dong Lee ,  Young-Seok Kim ,  Young-Sub You ,  Ki-Su Na ,  Woong Lee

    发明人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Jai-Dong Lee ,  Young-Seok Kim ,  Young-Sub You ,  Ki-Su Na ,  Woong Lee

    IPC分类号： H01L21/28 ,  H01L21/283

    CPC分类号： H01L27/11521 ,  H01L27/115

    摘要： In a method of manufacturing a floating gate of a non-volatile semiconductor memory, a pattern is formed on a substrate to have an opening that exposes a portion of the substrate. A first preliminary polysilicon layer is formed on the pattern and the exposed portion of the substrate to substantially fill the opening. A first polysilicon layer is formed by partially etching the first preliminary polysilicon layer until a first void formed in the first preliminary polysilicon layer is exposed. A second polysilicon layer is formed on the first polysilicon layer.

    摘要翻译： 在制造非易失性半导体存储器的浮置栅极的方法中，在衬底上形成图案以具有露出衬底的一部分的开口。 在图案和基板的暴露部分上形成第一初步多晶硅层以基本上填充开口。 通过部分地蚀刻第一初步多晶硅层直到形成在第一初步多晶硅层中的第一空穴露出来形成第一多晶硅层。 在第一多晶硅层上形成第二多晶硅层。

    Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device
    6.
    发明授权
    Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device 有权
    形成用于半导体器件的栅极结构的方法和形成用于非易失性存储器件的单元栅极结构的方法

    公开(公告)号：US07736963B2

    公开(公告)日：2010-06-15

    申请号：US11175569

    申请日：2005-07-05

    申请人： Woong Lee ,  Young-Sub You ,  Hun-Hyeoung Leam ,  Yong-Woo Hyung ,  Jai-Dong Lee ,  Ki-Su Na ,  Jung-Hwan Kim

    发明人： Woong Lee ,  Young-Sub You ,  Hun-Hyeoung Leam ,  Yong-Woo Hyung ,  Jai-Dong Lee ,  Ki-Su Na ,  Jung-Hwan Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L27/115 ,  H01L21/28247 ,  H01L27/11568 ,  H01L29/4933

    摘要： In an embodiment, a method of forming a gate structure for a semiconductor device includes forming a preliminary gate structure on a semiconductor substrate. The preliminary gate structure includes a gate oxide pattern and a conductive pattern sequentially stacked on the substrate. Then, a re-oxidation process is performed to the substrate having the preliminary gate structure using an oxygen radical including at least one oxygen atom, so that an oxide layer is formed on a surface of the substrate and sidewalls of the preliminary gate structure to form the gate structure for a semiconductor device. The thickness of the gate oxide pattern is prevented from increasing, and the quality of the oxide layer is improved.

    摘要翻译： 在一个实施例中，形成用于半导体器件的栅极结构的方法包括在半导体衬底上形成初步栅极结构。 预栅极结构包括依次层叠在基板上的栅极氧化物图案和导电图案。 然后，使用包含至少一个氧原子的氧自由基对具有预选择门结构的基板进行再氧化处理，从而在基板的表面和预选择门结构的侧壁上形成氧化物层，形成 半导体器件的栅极结构。 防止栅极氧化物图案的厚度增加，并且提高氧化物层的质量。

    Methods of forming void-free layers in openings of semiconductor substrates
    7.
    发明授权
    Methods of forming void-free layers in openings of semiconductor substrates 有权
    在半导体衬底的开口中形成无空隙层的方法

    公开(公告)号：US07629217B2

    公开(公告)日：2009-12-08

    申请号：US11107529

    申请日：2005-04-15

    申请人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Jai-Dong Lee ,  Young-Seok Kim ,  Young-Sub You ,  Ki-Su Na ,  Woong Lee

    发明人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Jai-Dong Lee ,  Young-Seok Kim ,  Young-Sub You ,  Ki-Su Na ,  Woong Lee

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/11521 ,  H01L27/115

    摘要： In a method of manufacturing a floating gate of a non-volatile semiconductor memory, a pattern is formed on a substrate to have an opening that exposes a portion of the substrate. A first preliminary polysilicon layer is formed on the pattern and the exposed portion of the substrate to substantially fill the opening. A first polysilicon layer is formed by partially etching the first preliminary polysilicon layer until a first void formed in the first preliminary polysilicon layer is exposed. A second polysilicon layer is formed on the first polysilicon layer.

    摘要翻译： 在制造非易失性半导体存储器的浮置栅极的方法中，在衬底上形成图案以具有露出衬底的一部分的开口。 在图案和基板的暴露部分上形成第一初步多晶硅层以基本上填充开口。 通过部分地蚀刻第一初步多晶硅层直到形成在第一初步多晶硅层中的第一空穴露出来形成第一多晶硅层。 在第一多晶硅层上形成第二多晶硅层。

    Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same
    9.
    发明授权
    Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same 有权
    形成非易失性存储器件的栅极结构的方法和用于执行其的装置

    公开(公告)号：US07160776B2

    公开(公告)日：2007-01-09

    申请号：US11145454

    申请日：2005-06-03

    申请人： Young-Sub You ,  Ki-Su Na ,  Hun-Hyeoung Leam ,  Woong Lee

    发明人： Young-Sub You ,  Ki-Su Na ,  Hun-Hyeoung Leam ,  Woong Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L21/28273

    摘要： Methods of forming a gate structure of a non-volatile memory device include forming a gate pattern having a control gate on a semiconductor substrate. An oxidation-preventing layer is formed on the control gate in a process chamber while maintaining a substantially oxygen free atmosphere in the process chamber. An oxide spacer is formed on a sidewall of the gate pattern with the oxidation-preventing layer thereon in the process chamber. Forming an oxidation-preventing layer may include exposing the gate pattern to a first gas in the process chamber and forming an oxide spacer may include exposing the gate pattern to a second gas including oxygen in the process chamber.

    摘要翻译： 形成非易失性存储器件的栅极结构的方法包括在半导体衬底上形成具有控制栅极的栅极图案。 在处理室中的控制栅上形成氧化防止层，同时在处理室中保持基本上无氧的气氛。 氧化间隔物形成在栅极图案的侧壁上，氧化防止层位于处理室中。 形成氧化防止层可以包括将栅极图案暴露于处理室中的第一气体并且形成氧化物间隔物可以包括将栅极图案暴露于包含处理室中的氧的第二气体。

    Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same
    10.
    发明申请
    Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same 有权
    形成非易失性存储器件的栅极结构的方法和用于执行其的装置

    公开(公告)号：US20050277252A1

    公开(公告)日：2005-12-15

    申请号：US11145454

    申请日：2005-06-03

    申请人： Young-Sub You ,  Ki-Su Na ,  Hun-Hyeoung Leam ,  Woong Lee

    发明人： Young-Sub You ,  Ki-Su Na ,  Hun-Hyeoung Leam ,  Woong Lee

    IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L21/4763

    CPC分类号： H01L21/28273

    摘要： Methods of forming a gate structure of a non-volatile memory device include forming a gate pattern having a control gate on a semiconductor substrate. An oxidation-preventing layer is formed on the control gate in a process chamber while maintaining a substantially oxygen free atmosphere in the process chamber. An oxide spacer is formed on a sidewall of the gate pattern with the oxidation-preventing layer thereon in the process chamber. Forming an oxidation-preventing layer may include exposing the gate pattern to a first gas in the process chamber and forming an oxide spacer may include exposing the gate pattern to a second gas including oxygen in the process chamber.

    摘要翻译： 形成非易失性存储器件的栅极结构的方法包括在半导体衬底上形成具有控制栅极的栅极图案。 在处理室中的控制栅上形成氧化防止层，同时在处理室中保持基本上无氧的气氛。 氧化间隔物形成在栅极图案的侧壁上，氧化防止层位于处理室中。 形成氧化防止层可以包括将栅极图案暴露于处理室中的第一气体并且形成氧化物间隔物可以包括将栅极图案暴露于包含处理室中的氧的第二气体。