Invention Application
- Patent Title: HIGH ETCH RESISTANT MATERIAL FOR DOUBLE PATTERNING
- Patent Title (中): 高耐蚀材料双重图案
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Application No.: US12210737Application Date: 2008-09-15
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Publication No.: US20100068656A1Publication Date: 2010-03-18
- Inventor: Hsiao-Wei Yeh , Ching-Yu Chang , Jian-Hong Chen , Chih-An Lin
- Applicant: Hsiao-Wei Yeh , Ching-Yu Chang , Jian-Hong Chen , Chih-An Lin
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.
Public/Granted literature
- US08158335B2 High etch resistant material for double patterning Public/Granted day:2012-04-17
Information query
IPC分类: