公开(公告)号：US08158335B2

公开(公告)日：2012-04-17

申请号：US12210737

申请日：2008-09-15

Applicant: Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

Inventor： Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

IPC: G03F7/26

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  G03F7/405 ,  H01L21/3086

Abstract: The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

Abstract translation: 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层，由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内，或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

公开(公告)号：US20100310995A1

公开(公告)日：2010-12-09

申请号：US12702737

申请日：2010-02-09

Applicant: Chun-Kuang Chen ,  Hsiao-Wei Yeh ,  Chih-An Lin ,  Chien-Wei Wang ,  Feng-Cheng Hsu

Inventor： Chun-Kuang Chen ,  Hsiao-Wei Yeh ,  Chih-An Lin ,  Chien-Wei Wang ,  Feng-Cheng Hsu

IPC: G03F7/20

CPC classification number: G03F7/38 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144

Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.

Abstract translation: 光刻图案的方法包括在基板上形成第一抗蚀剂图案，其中第一抗蚀图案包括多个开口。 第二抗蚀剂图案形成在基板上和第一抗蚀剂图案的多个开口内，其中第二抗蚀剂图案在基板上包括至少一个开口。 去除第一抗蚀剂图案以露出第一抗蚀剂图案下方的衬底。

公开(公告)号：US08741552B2

公开(公告)日：2014-06-03

申请号：US12702737

申请日：2010-02-09

Applicant: Chun-Kuang Chen ,  Hsiao-Wei Yeh ,  Chih-An Lin ,  Chien-Wei Wang ,  Feng-Cheng Hsu

Inventor： Chun-Kuang Chen ,  Hsiao-Wei Yeh ,  Chih-An Lin ,  Chien-Wei Wang ,  Feng-Cheng Hsu

IPC: G03F7/26

CPC classification number: G03F7/38 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144

Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.

Abstract translation: 光刻图案的方法包括在基板上形成第一抗蚀剂图案，其中第一抗蚀图案包括多个开口。 第二抗蚀剂图案形成在基板上和第一抗蚀剂图案的多个开口内，其中第二抗蚀剂图案在基板上包括至少一个开口。 去除第一抗蚀剂图案以露出第一抗蚀剂图案下方的衬底。

公开(公告)号：US20100068656A1

公开(公告)日：2010-03-18

申请号：US12210737

申请日：2008-09-15

Applicant: Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

Inventor： Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

IPC: G03F7/20

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  G03F7/405 ,  H01L21/3086

Abstract: The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

Abstract translation: 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层，由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内，或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

公开(公告)号：US08623766B2

公开(公告)日：2014-01-07

申请号：US13237881

申请日：2011-09-20

Applicant: Ji Cui ,  Steven Grumbine ,  Glenn Whitener ,  Chih-An Lin

Inventor： Ji Cui ,  Steven Grumbine ,  Glenn Whitener ,  Chih-An Lin

IPC: H01L21/302 ,  H01L21/461

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising coated α-alumina particles, an organic carboxylic acid, and water. The invention also provides a chemical-mechanical polishing composition comprising an abrasive having a negative zeta potential in the polishing composition, an organic carboxylic acid, at least one alkyldiphenyloxide disulfonate surfactant, and water, wherein the polishing composition does not further comprise a heterocyclic compound. The abrasive is colloidally stable in the polishing composition. The invention further provides methods of polishing a substrate with the aforesaid polishing compositions.

Abstract translation: 本发明提供了包含涂覆的α-氧化铝颗粒，有机羧酸和水的化学机械抛光组合物。 本发明还提供了一种化学机械抛光组合物，其包括抛光组合物中具有负ζ电位的磨料，有机羧酸，至少一种烷基二苯醚二磺酸盐表面活性剂和水，其中抛光组合物不再含有杂环化合物。 研磨剂在抛光组合物中胶体稳定。 本发明还提供了用前述抛光组合物抛光衬底的方法。

公开(公告)号：US20130072021A1

公开(公告)日：2013-03-21

申请号：US13237881

申请日：2011-09-20

Applicant: Ji Cui ,  Steven Grumbine ,  Glenn Whitener ,  Chih-An Lin

Inventor： Ji Cui ,  Steven Grumbine ,  Glenn Whitener ,  Chih-An Lin

IPC: H01L21/306 ,  C09K13/00

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising coated α-alumina particles, an organic carboxylic acid, and water. The invention also provides a chemical-mechanical polishing composition comprising an abrasive having a negative zeta potential in the polishing composition, an organic carboxylic acid, at least one alkyldiphenyloxide disulfonate surfactant, and water, wherein the polishing composition does not further comprise a heterocyclic compound. The abrasive is colloidally stable in the polishing composition. The invention further provides methods of polishing a substrate with the aforesaid polishing compositions.

Abstract translation: 本发明提供了包含涂覆的α-氧化铝颗粒，有机羧酸和水的化学 - 机械抛光组合物。 本发明还提供了一种化学机械抛光组合物，其包括抛光组合物中具有负ζ电位的磨料，有机羧酸，至少一种烷基二苯醚二磺酸盐表面活性剂和水，其中抛光组合物不再含有杂环化合物。 研磨剂在抛光组合物中胶体稳定。 本发明还提供了用前述抛光组合物抛光衬底的方法。