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公开(公告)号：US08158335B2
公开(公告)日：2012-04-17
申请号：US12210737
申请日：2008-09-15
申请人： Hsiao-Wei Yeh , Ching-Yu Chang , Jian-Hong Chen , Chih-An Lin
发明人： Hsiao-Wei Yeh , Ching-Yu Chang , Jian-Hong Chen , Chih-An Lin
IPC分类号： G03F7/26
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/405 , H01L21/3086
摘要： The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.
摘要翻译： 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层，由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内，或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。
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公开(公告)号：US20100068656A1
公开(公告)日：2010-03-18
申请号：US12210737
申请日：2008-09-15
申请人： Hsiao-Wei Yeh , Ching-Yu Chang , Jian-Hong Chen , Chih-An Lin
发明人： Hsiao-Wei Yeh , Ching-Yu Chang , Jian-Hong Chen , Chih-An Lin
IPC分类号： G03F7/20
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/405 , H01L21/3086
摘要： The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.
摘要翻译： 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层，由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内，或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。
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3.发明申请DOUBLE PATTERNING STRATEGY FOR CONTACT HOLE AND TRENCH IN PHOTOLITHOGRAPHY 有权用于接触孔的双重图案策略和光刻胶中的TRENCH公开(公告)号：US20100310995A1
公开(公告)日：2010-12-09
申请号：US12702737
申请日：2010-02-09
申请人： Chun-Kuang Chen , Hsiao-Wei Yeh , Chih-An Lin , Chien-Wei Wang , Feng-Cheng Hsu
发明人： Chun-Kuang Chen , Hsiao-Wei Yeh , Chih-An Lin , Chien-Wei Wang , Feng-Cheng Hsu
IPC分类号： G03F7/20
CPC分类号： G03F7/38 , G03F7/0035 , G03F7/40 , H01L21/0337 , H01L21/31144
摘要： A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.
摘要翻译： 光刻图案的方法包括在基板上形成第一抗蚀剂图案，其中第一抗蚀图案包括多个开口。 第二抗蚀剂图案形成在基板上和第一抗蚀剂图案的多个开口内，其中第二抗蚀剂图案在基板上包括至少一个开口。 去除第一抗蚀剂图案以露出第一抗蚀剂图案下方的衬底。
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4.发明授权公开(公告)号：US08741552B2
公开(公告)日：2014-06-03
申请号：US12702737
申请日：2010-02-09
申请人： Chun-Kuang Chen , Hsiao-Wei Yeh , Chih-An Lin , Chien-Wei Wang , Feng-Cheng Hsu
发明人： Chun-Kuang Chen , Hsiao-Wei Yeh , Chih-An Lin , Chien-Wei Wang , Feng-Cheng Hsu
IPC分类号： G03F7/26
CPC分类号： G03F7/38 , G03F7/0035 , G03F7/40 , H01L21/0337 , H01L21/31144
摘要： A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.
摘要翻译： 光刻图案的方法包括在基板上形成第一抗蚀剂图案，其中第一抗蚀图案包括多个开口。 第二抗蚀剂图案形成在基板上和第一抗蚀剂图案的多个开口内，其中第二抗蚀剂图案在基板上包括至少一个开口。 去除第一抗蚀剂图案以露出第一抗蚀剂图案下方的衬底。
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公开(公告)号：US20120009524A1
公开(公告)日：2012-01-12
申请号：US13238335
申请日：2011-09-21
申请人： Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
发明人： Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
IPC分类号： G03F7/20 , H01L21/312
CPC分类号： G03F7/0397 , G03F7/11 , G03F7/168 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
摘要翻译： 用于半导体制造的感光材料包括共聚物，其包括多个光致抗蚀剂链和多个疏水链，每个疏水链连接到一个光致抗蚀剂链的末端。 响应于外部施加的能量的共聚物将自组装到光致抗蚀剂层和疏水层。
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公开(公告)号：US20100209852A1
公开(公告)日：2010-08-19
申请号：US12389279
申请日：2009-02-19
申请人： Hsiao-Wei Yeh , Chi-Kang Chang , Jian-Hong Chen , Kuo-Chun Huang
发明人： Hsiao-Wei Yeh , Chi-Kang Chang , Jian-Hong Chen , Kuo-Chun Huang
CPC分类号： H01L21/6715 , G03F7/16 , G03F7/30
摘要： The present disclosure provides a method for fabricating a semiconductor device using a track pipeline system. The method includes storing a plurality of chemicals in a plurality of storage units of the system, wherein each storage unit is operable to store one of the chemicals, mixing the chemicals into a mixture, and dispensing the mixture onto a wafer using a nozzle of the system.
摘要翻译： 本公开提供了一种使用轨道管道系统来制造半导体器件的方法。 该方法包括将多种化学品存储在系统的多个存储单元中，其中每个存储单元可操作地存储化学品中的一种，将化学品混合到混合物中，并且使用 系统。
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公开(公告)号：US08460856B2
公开(公告)日：2013-06-11
申请号：US13238335
申请日：2011-09-21
申请人： Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
发明人： Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
CPC分类号： G03F7/0397 , G03F7/11 , G03F7/168 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
摘要翻译： 用于半导体制造的感光材料包括共聚物，其包括多个光致抗蚀剂链和多个疏水链，每个疏水链连接到一个光致抗蚀剂链的末端。 响应于外部施加的能量的共聚物将自组装到光致抗蚀剂层和疏水层。
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公开(公告)号：US08029969B2
公开(公告)日：2011-10-04
申请号：US11748322
申请日：2007-05-14
申请人： Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
发明人： Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
CPC分类号： G03F7/0397 , G03F7/11 , G03F7/168 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
摘要翻译： 用于半导体制造的感光材料包括共聚物，其包括多个光致抗蚀剂链和多个疏水链，每个疏水链连接到一个光致抗蚀剂链的末端。 响应于外部施加的能量的共聚物将自组装到光致抗蚀剂层和疏水层。
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公开(公告)号：US20080286682A1
公开(公告)日：2008-11-20
申请号：US11748322
申请日：2007-05-14
申请人： Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
发明人： Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
CPC分类号： G03F7/0397 , G03F7/11 , G03F7/168 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
摘要翻译： 用于半导体制造的感光材料包括共聚物，其包括多个光致抗蚀剂链和多个疏水链，每个疏水链连接到一个光致抗蚀剂链的末端。 响应于外部施加的能量的共聚物将自组装到光致抗蚀剂层和疏水层。
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10.发明申请ACTIVE MATRIX ORGANIC ELECTROLUMINESCENT SUBSTRATE AND METHOD OF MAKING THE SAME 审中-公开有源矩阵有机电致发光基板及其制造方法公开(公告)号：US20080230798A1
公开(公告)日：2008-09-25
申请号：US11751616
申请日：2007-05-21
申请人： Shu-Hui Huang , Hsiao-Wei Yeh , Min-Ling Hung , Hsia-Tsai Hsiao
发明人： Shu-Hui Huang , Hsiao-Wei Yeh , Min-Ling Hung , Hsia-Tsai Hsiao
IPC分类号： H01L21/02 , H01L21/027 , H01L33/00
CPC分类号： H01L27/3246 , H01L21/0274 , H01L27/3248 , H01L27/3258 , H01L51/56
摘要： An active matrix organic electroluminescent substrate includes a substrate having a controlling element region and a luminescent region, a thin film transistor, a first passivation layer, a conductive layer electrically connected to the thin film transistor, and a second passivation layer disposed on the first passivation layer and the conductive layer. The second passivation layer has an opening partially exposing the conductive layer, and a step-shaped structure located between the controlling element region and the luminescent region.
摘要翻译： 有源矩阵有机电致发光基板包括具有控制元件区域和发光区域的基板，薄膜晶体管，第一钝化层，与薄膜晶体管电连接的导电层，以及设置在第一钝化层上的第二钝化层 层和导电层。 第二钝化层具有部分地暴露导电层的开口，以及位于控制元件区域和发光区域之间的阶梯状结构。
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