发明申请
US20100081294A1 PATTERN DATA CREATING METHOD, PATTERN DATA CREATING PROGRAM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
有权
图形数据创建方法，图形数据创建程序和半导体器件制造方法
- 专利标题： PATTERN DATA CREATING METHOD, PATTERN DATA CREATING PROGRAM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 专利标题（中）： 图形数据创建方法，图形数据创建程序和半导体器件制造方法
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申请号： US12552010申请日： 2009-09-01
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公开(公告)号： US20100081294A1公开(公告)日： 2010-04-01
- 发明人: Ryuji OGAWA , Masahiro Miyairi , Shimon Maeda , Suigen Kyoh , Satoshi Tanaka
- 申请人： Ryuji OGAWA , Masahiro Miyairi , Shimon Maeda , Suigen Kyoh , Satoshi Tanaka
- 优先权： JP2008-250293 20080929
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; G06F17/50
摘要：
A pattern data creating method according to an embodiment of the present invention comprises: extracting marginal error patterns using a first result obtained by applying process simulation to mask pattern data based on an evaluation target cell pattern, applying the process simulation to mask pattern data based on an evaluation target cell pattern with peripheral environment pattern created by arranging a peripheral environment pattern in the marginal error patterns such that a second result obtained by creating mask pattern data and applying the process simulation to the mask pattern data is more deteriorated than the first result, and correcting the evaluation target cell pattern or the mask pattern data based on the evaluation target cell pattern when there is a fatal error.
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