发明申请
US20100111808A1 GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME
审中-公开
具有改性晶体质量的III族氮化物单晶在其背面种子晶体及其生产方法
- 专利标题： GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME
- 专利标题（中）： 具有改性晶体质量的III族氮化物单晶在其背面种子晶体及其生产方法
-
申请号： US12612477申请日： 2009-11-04
-
公开(公告)号： US20100111808A1公开(公告)日： 2010-05-06
- 发明人: Siddha Pimputkar , Derrick S. Kamber , Makoto Saito , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人： Siddha Pimputkar , Derrick S. Kamber , Makoto Saito , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： C30B25/00
- IPC分类号： C30B25/00 ; C01B21/06
摘要：
The present invention provides a method for growing group III-nitride crystals wherein the group III-nitride crystal growth occurs on an etched seed crystal. The etched seed is fabricated prior to growth using a temperature profile which produces a high solubility of the group III-nitride material in a seed crystals zone as compared to a source materials zone. The measured X-ray diffraction of the obtained crystals have significantly narrower Full Width at Half Maximum values as compared to crystals grown without etch back of the seed crystal surfaces prior to growth.
信息查询
