发明申请
- 专利标题: CMOS STRUCTURE AND METHOD FOR FABRICATION THEREOF USING MULTIPLE CRYSTALLOGRAPHIC ORIENTATIONS AND GATE MATERIALS
- 专利标题(中): CMOS结构及其使用多种晶体取向和栅极材料制造的方法
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申请号: US12683535申请日: 2010-01-07
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公开(公告)号: US20100112800A1公开(公告)日: 2010-05-06
- 发明人: Tze-Chiang Chen , Meikei Ieong , Rajarao Jammy , Mukesh V. Khare , Chun-yung Sung , Richard Wise , Hongwen Yan , Ying Zhang
- 申请人: Tze-Chiang Chen , Meikei Ieong , Rajarao Jammy , Mukesh V. Khare , Chun-yung Sung , Richard Wise , Hongwen Yan , Ying Zhang
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/28
- IPC分类号: H01L21/28
摘要:
Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.