发明申请
- 专利标题: Lithographic Apparatus and Device Manufacturing Method
- 专利标题(中): 光刻设备和器件制造方法
-
申请号: US12621143申请日: 2009-11-18
-
公开(公告)号: US20100123886A1公开(公告)日: 2010-05-20
- 发明人: Franciscus Godefridus Casper BIJNEN , Jozef Cornelis Antonius Roijers , Patrick Warnaar , Marc Van Kemenade , Hoite Pieter Theodoor Tolsma
- 申请人: Franciscus Godefridus Casper BIJNEN , Jozef Cornelis Antonius Roijers , Patrick Warnaar , Marc Van Kemenade , Hoite Pieter Theodoor Tolsma
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 主分类号: G03B27/42
- IPC分类号: G03B27/42 ; G03B27/32
摘要:
A method for manufacturing a device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective exposure field; determining an absolute position of each exposure field from the alignment information for the respective exposure field; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields.
公开/授权文献
信息查询