发明申请
- 专利标题： TWO-LINE MIXING OF CHEMICAL AND ABRASIVE PARTICLES WITH ENDPOINT CONTROL FOR CHEMICAL MECHANICAL POLISHING
- 专利标题（中）： 化学机械抛光末端控制化学磨料颗粒两相混合
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申请号： US12621376申请日： 2009-11-18
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公开(公告)号： US20100130101A1公开(公告)日： 2010-05-27
- 发明人: YUCHUN WANG , Long Cheng , Kuo-Lih Chang , Wei-Yung Hsu , Wen-Chiang Tu
- 申请人： YUCHUN WANG , Long Cheng , Kuo-Lih Chang , Wei-Yung Hsu , Wen-Chiang Tu
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： B24B49/04
- IPC分类号： B24B49/04 ; B24B49/10 ; B24B49/12 ; B24B57/02
摘要：
Embodiments described herein provide a method for polishing a substrate surface. The methods generally include storing processing components in multiple storage units during processing, and combining the processing components to create a slurry while flowing the processing components to a polishing pad. A substrate is polished using the slurry, and the thickness of a material layer disposed on the substrate is determined. The flow rate of one or more processing components is then adjusted to affect the rate of removal of the material layer disposed on the substrate.
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