发明申请
- 专利标题： METHOD FOR PASSIVATING A FIELD-EFFECT TRANSISTOR
- 专利标题（中）： 用于对场效应晶体管进行处理的方法
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申请号： US12619304申请日： 2009-11-16
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公开(公告)号： US20100133591A1公开(公告)日： 2010-06-03
- 发明人: Richard Fix , Oliver Wolst , Stefan Henneck , Alexander Martin , Martin Le-Huu
- 申请人： Richard Fix , Oliver Wolst , Stefan Henneck , Alexander Martin , Martin Le-Huu
- 优先权： DE102008043858.8 20081119
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/3205 ; H01L29/861
摘要：
The present invention relates to a method for passivating a semiconductor component having at least one chemosensitive electrode that is blinded by the application of a glass layer. The present invention also relates to a device for detecting at least one substance included in a fluid stream, including at least one semiconductor component acting as a measuring sensor as well as at least one semiconductor component acting as a reference element, the semiconductor components each having a chemosensitive electrode, and the chemosensitive electrode of the semiconductor component acting as the reference element being passivated. For the passivation, a glass layer may be applied at least to the chemosensitive electrode of the semiconductor component acting as reference element.
公开/授权文献
- US08237204B2 Method for passivating a field-effect transistor 公开/授权日：2012-08-07
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