发明申请
- 专利标题: THERMAL METHODS FOR CLEANING POST-CMP WAFERS
- 专利标题(中): 用于清洁后CMP抛光的热方法
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申请号: US12699518申请日: 2010-02-03
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公开(公告)号: US20100136788A1公开(公告)日: 2010-06-03
- 发明人: Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
- 申请人: Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; H01L21/3205
摘要:
Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.
公开/授权文献
- US07884017B2 Thermal methods for cleaning post-CMP wafers 公开/授权日:2011-02-08