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发明申请
US20100148142A1 ALUMINUM COPPER OXIDE BASED MEMORY DEVICES AND METHODS FOR MANUFACTURE 有权
基于氧化铝氧化物的存储器件及其制造方法

ALUMINUM COPPER OXIDE BASED MEMORY DEVICES AND METHODS FOR MANUFACTURE
摘要：
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a first electrode and a second electrode. The memory device further includes a diode and an anti-fuse metal-oxide memory element comprising aluminum oxide and copper oxide. The diode and the metal-oxide memory element are arranged in electrical series between the first electrode and the second electrode.
摘要（中）：

描述存储器件以及制造方法。 如本文所述的存储器件包括第一电极和第二电极。 存储器件还包括二极管和包含氧化铝和氧化铜的抗熔丝金属氧化物存储元件。 二极管和金属氧化物存储元件电连接在第一电极和第二电极之间。

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