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发明申请
US20100151674A1 Structures Electrically Connecting Aluminum and Copper Interconnections and Methods of Forming the Same 有权
结构电连接铝和铜互连及其形成方法

Structures Electrically Connecting Aluminum and Copper Interconnections and Methods of Forming the Same
摘要：
A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.
摘要（中）：

用于电连接铝和铜互连的结构和形成方法使用电连接铝和铜互连的内部形状来稳定半导体金属化工艺。 为此，铜互连设置在半导体衬底上。 互连感应层和互连插入层依次形成在铜互连上以具有暴露铜互连的接触孔。 接触孔的上直径可以形成为大于其直径。 阻挡层和铝互连填充在接触孔中。 铝互连形成为不通过接触孔直接接触铜互连。

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