发明申请
US20100155721A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
审中-公开
薄膜晶体管阵列基板及其制造方法
- 专利标题： THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 薄膜晶体管阵列基板及其制造方法
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申请号： US12645433申请日： 2009-12-22
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公开(公告)号： US20100155721A1公开(公告)日： 2010-06-24
- 发明人: Je-Hun LEE , Tae-Hyung IHN , Dong-Hoon LEE , Do-Hyun KIM
- 申请人： Je-Hun LEE , Tae-Hyung IHN , Dong-Hoon LEE , Do-Hyun KIM
- 优先权： KR10-2008-0133624 20081224
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/34
摘要：
A thin film transistor (TFT) array substrate is provided. The thin film transistor (TFT) array substrate includes an insulating substrate, an oxide semiconductor layer formed on the insulating substrate and including an additive element, a gate electrode overlapping the oxide semiconductor layer, and a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, wherein the oxygen bond energy of the additive element is greater than that of a base element of the oxide semiconductor layer.
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