发明申请
- 专利标题： PLASMA DOPING APPARATUS AND PLASMA DOPING METHOD
- 专利标题（中）： 等离子喷涂装置和等离子喷涂方法
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申请号： US12601993申请日： 2008-05-13
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公开(公告)号： US20100167507A1公开(公告)日： 2010-07-01
- 发明人: Masahiro Horigome , Yoshihiro Ishida
- 申请人： Masahiro Horigome , Yoshihiro Ishida
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-146034 20070531
- 国际申请： PCT/JP2008/058778 WO 20080513
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C23C16/513 ; C23C16/511 ; C23C16/52
摘要：
A plasma doping apparatus implants an impurity element into a surface of a processing target object W by using plasma. The apparatus includes a high frequency power supply 72 configured to supply a high frequency bias power to a mounting table 34 installed within a processing chamber 32; a gas feed unit 96 configured to supply a doping gas containing an impurity element into the processing chamber 32; and a plasma generation unit 78 configured to generate the plasma within the processing chamber 32. In accordance with this apparatus, a portion doped with the impurity element can be made very thin, and the impurity element can be rapidly doped in a high concentration.
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