发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12751300申请日: 2010-03-31
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公开(公告)号: US20100187524A1公开(公告)日: 2010-07-29
- 发明人: Atsuo ISOBE , Tamae TAKANO , Yasuyuki ARAI , Fumiko TERASAWA
- 申请人: Atsuo ISOBE , Tamae TAKANO , Yasuyuki ARAI , Fumiko TERASAWA
- 申请人地址: JP Kanagawa-ken
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Kanagawa-ken
- 优先权: JP2006-126636 20060428
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L29/12 ; H01L29/788
摘要:
A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
公开/授权文献
- US08896049B2 Semiconductor device and method for manufacturing the same 公开/授权日:2014-11-25