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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20100187524A1

    公开(公告)日：2010-07-29

    申请号：US12751300

    申请日：2010-03-31

    申请人： Atsuo ISOBE ,  Tamae TAKANO ,  Yasuyuki ARAI ,  Fumiko TERASAWA

    发明人： Atsuo ISOBE ,  Tamae TAKANO ,  Yasuyuki ARAI ,  Fumiko TERASAWA

    IPC分类号： H01L29/786 ,  H01L29/12 ,  H01L29/788

    CPC分类号： H01L27/12 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.

    摘要翻译： 本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20110031561A1

    公开(公告)日：2011-02-10

    申请号：US12909393

    申请日：2010-10-21

    申请人： Tamae TAKANO ,  Atsuo ISOBE

    发明人： Tamae TAKANO ,  Atsuo ISOBE

    IPC分类号： H01L29/786

    CPC分类号： H01L29/78606 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L29/0603 ,  H01L29/78609 ,  H01L29/78636

    摘要： The present invention provides a semiconductor device which suppresses a short circuit and a leakage current between a semiconductor film and a gate electrode generated by a break or thin thickness of a gate insulating film in an end portion of a channel region of the semiconductor film, and the manufacturing method of the semiconductor device. Plural thin film transistors which each have semiconductor film provided over a substrate continuously, conductive films provided over the semiconductor film through a gate insulating film, source and drain regions provided in the semiconductor film which are not overlapped with the conductive films, and channel regions provided in the semiconductor film existing under the conductive films and between the source and drain regions. And impurity regions provided in the semiconductor film which is not overlapped with the conductive film and provided adjacent to the source and drain regions. Further, the conductive films are provided over the channel regions and regions of the semiconductor film which are provided adjacent to the channel regions.

    摘要翻译： 本发明提供一种半导体器件，其抑制由半导体膜的沟道区域的端部中的栅极绝缘膜的断裂或薄的厚度产生的半导体膜和栅电极之间的短路和漏电流，以及 半导体器件的制造方法。 连续地设置在基板上的半导体膜的多个薄膜晶体管，通过栅极绝缘膜设置在半导体膜上的导电膜，设置在半导体膜中的不与导电膜重叠的源区和漏区，以及设置的沟道区 在存在于导电膜之下以及源极和漏极区之间的半导体膜中。 以及设置在半导体膜中的不与导电膜重叠并且设置在源极和漏极区附近的杂质区。 此外，导电膜设置在与沟道区相邻设置的半导体膜的沟道区域和区域之上。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20090098720A1

    公开(公告)日：2009-04-16

    申请号：US12334589

    申请日：2008-12-15

    申请人： Atsuo ISOBE ,  Satoshi MURAKAMI ,  Tamae TAKANO ,  Shunpei YAMAZAKI

    发明人： Atsuo ISOBE ,  Satoshi MURAKAMI ,  Tamae TAKANO ,  Shunpei YAMAZAKI

    IPC分类号： H01L21/28 ,  H01L21/31

    CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L27/1248 ,  H01L29/42384

    摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to the semiconductor film under a condition of an electron density of 1×1011 cm−3 or more and 1×1013 cm−3 or less and an electron temperature of 0.5 eV or more and 1.5 eV or less, using a high frequency wave, forming a second insulating film to cover the semiconductor film, forming a gate electrode over the second insulating film, forming a third insulating film to cover the gate electrode, and forming a conductive film over the third insulating film.

    摘要翻译： 本发明的半导体器件的制造方法包括以下步骤：在衬底上形成第一绝缘膜，在第一绝缘膜上形成半导体膜，通过对半导体膜进行等离子体处理来对半导体膜进行氧化或氮化 使用高频波，电子密度为1×10 11 cm -3以上且1×10 13 cm -3以下，电子温度为0.5eV以上且1.5eV以下的条件，形成覆盖半导体的第2绝缘膜 在所述第二绝缘膜上形成栅电极，形成第三绝缘膜以覆盖所述栅电极，以及在所述第三绝缘膜上形成导电膜。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100055896A1

    公开(公告)日：2010-03-04

    申请号：US12618161

    申请日：2009-11-13

    申请人： Hiroko ABE ,  Mikio YUKAWA ,  Tamae TAKANO ,  Yoshinobu ASAMI ,  Kiyoshi KATO ,  Ryoji NOMURA ,  Yoshitaka MORIYA

    发明人： Hiroko ABE ,  Mikio YUKAWA ,  Tamae TAKANO ,  Yoshinobu ASAMI ,  Kiyoshi KATO ,  Ryoji NOMURA ,  Yoshitaka MORIYA

    IPC分类号： H01L21/3205

    CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/13 ,  H01L27/283 ,  H01L51/0059

    摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.

    摘要翻译： 本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。 本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

    CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME 有权
    晶体半导体薄膜，其制造方法，半导体器件及其制造方法

    公开(公告)号：US20100038716A1

    公开(公告)日：2010-02-18

    申请号：US12574162

    申请日：2009-10-06

    申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

    发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

    IPC分类号： H01L29/786

    CPC分类号： H01L29/04 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

    摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

    摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。 在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。

    MEMORY DEVICE AND MANUFACTURING METHOD THE SAME
    9.
    发明申请
    MEMORY DEVICE AND MANUFACTURING METHOD THE SAME 有权
    存储器件和制造方法相同

    公开(公告)号：US20120273778A1

    公开(公告)日：2012-11-01

    申请号：US13546013

    申请日：2012-07-11

    申请人： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

    发明人： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

    IPC分类号： H01L29/12

    CPC分类号： H01L27/1082 ,  B82Y10/00 ,  G11C11/34 ,  G11C13/0014 ,  G11C2213/79 ,  H01L23/4828 ,  H01L27/105 ,  H01L27/1203 ,  H01L27/1244 ,  H01L27/28 ,  H01L29/458 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

    摘要翻译： 可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。 鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。 包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

    CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME
    10.
    发明申请
    CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME 有权
    晶体半导体薄膜，其制造方法，半导体器件及其制造方法

    公开(公告)号：US20120108049A1

    公开(公告)日：2012-05-03

    申请号：US13338366

    申请日：2011-12-28

    申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

    发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

    IPC分类号： H01L21/28

    CPC分类号： H01L29/04 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

    摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

    摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。 在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。