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公开(公告)号:US07692223B2
公开(公告)日:2010-04-06
申请号:US11785145
申请日:2007-04-16
申请人: Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
发明人: Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
IPC分类号: H01L27/088
CPC分类号: H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要: A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译: 本发明的半导体器件的制造方法包括以下步骤:在衬底上依次层叠有半导体膜,栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面,使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。
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公开(公告)号:US20070252179A1
公开(公告)日:2007-11-01
申请号:US11785145
申请日:2007-04-16
申请人: Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
发明人: Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
IPC分类号: H01L29/76
CPC分类号: H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要: A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译: 本发明的半导体器件的制造方法包括以下步骤:在衬底上依次层叠有半导体膜,栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面,使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。
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公开(公告)号:US20100187524A1
公开(公告)日:2010-07-29
申请号:US12751300
申请日:2010-03-31
申请人: Atsuo ISOBE , Tamae TAKANO , Yasuyuki ARAI , Fumiko TERASAWA
发明人: Atsuo ISOBE , Tamae TAKANO , Yasuyuki ARAI , Fumiko TERASAWA
IPC分类号: H01L29/786 , H01L29/12 , H01L29/788
CPC分类号: H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要: A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译: 本发明的半导体器件的制造方法包括以下步骤:在衬底上依次层叠有半导体膜,栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面,使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。
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公开(公告)号:US08896049B2
公开(公告)日:2014-11-25
申请号:US12751300
申请日:2010-03-31
申请人: Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
发明人: Atsuo Isobe , Tamae Takano , Yasuyuki Arai , Fumiko Terasawa
IPC分类号: H01L29/788 , H01L27/115 , H01L21/84 , H01L27/12 , H01L29/76
CPC分类号: H01L27/12 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要: A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.
摘要翻译: 本发明的半导体器件的制造方法包括以下步骤:在衬底上依次层叠有半导体膜,栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面,使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。
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