发明申请
- 专利标题: GROUND RETURN FOR PLASMA PROCESSES
- 专利标题(中): 等离子体工艺的接地返回
-
申请号: US12700484申请日: 2010-02-04
-
公开(公告)号: US20100196626A1公开(公告)日: 2010-08-05
- 发明人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
- 申请人: Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: C23C16/509
- IPC分类号: C23C16/509
摘要:
A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
公开/授权文献
- US09382621B2 Ground return for plasma processes 公开/授权日:2016-07-05
信息查询
IPC分类: